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首页> 外文期刊>The journal of physical chemistry, B. Condensed matter, materials, surfaces, interfaces & biophysical >A Complete Structural Study of the Coverage Dependence of the Bonding of Thiophene on Cu(111)
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A Complete Structural Study of the Coverage Dependence of the Bonding of Thiophene on Cu(111)

机译:噻吩在Cu(111)上键合的覆盖依赖性的完整结构研究

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摘要

The influence of coverage on the structure and bonding of thiophene within chemisorbed overlayers on Cu(111) has been investigated. Normal incidnece X-ray standing wavefield absorption (NIXSW) and near-edge X-ray absorption fine structure spectroscopy (NEXAFS) were used to determine the adsorption site and orientation of thiophene. In the low coverage phase the thiophene molecle forms a #pi#-bonded species, adopting an atop adsorption site with a Cu-S separation of 2.62 (+-) 0.03 A with the ring inclined by 26 (+-) 5 deg. On increasing coverage, thiophene undergoes a compressional phase transformation to a more weakly bound sulfur lone-pair-bonded species. In this new phase the thiophene still occupies an atop site but the Cu-S separation has increased by 0.2 A and the ring is now inclined at 44 (+-) 6 deg to the surface.
机译:已经研究了覆盖度对化学吸附的覆盖层中的噻吩在Cu(111)上的结构和键合的影响。正常的入射X射线驻波场吸收(NIXSW)和近边缘X射线吸收精细结构光谱(NEXAFS)用于确定噻吩的吸附位置和方向。在低覆盖阶段,噻吩分子形成#pi#键结合的物质,采用顶部吸附位点,Cu-S间距为2.62(±)0.03 A,环倾斜26(±)5度。随着覆盖率的增加,噻吩经历压缩相转变为结合较弱的硫孤对键合物种。在这个新阶段,噻吩仍占据一个顶位,但是Cu-S的间隔增加了0.2 A,并且环现在相对于表面倾斜了44(±)6度。

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