Equilibrium Shape Diagram for Strained Ge Nanocrystals on Si(001)

R. Stanley Williams; Gilberto Medeiros-Ribeiro; Theodore I. Kamins

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Equilibrium Shape Diagram for Strained Ge Nanocrystals on Si(001)

机译：Si（001）上应变的Ge纳米晶体的平衡形状图

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We introduce a chemical-thermodynamic model to explain the formation and annealing behavior of Ge nanocrystalline islands grown on Si(001). Assuming the nanocrystals are essentially large adsorbed molecules, we propose a simple free energy expression for islands of different shapes interacting with each other via the substrate on which they reside. Nanocrystal growth, disappearance, and shape transitions are all consonant with a near-equilibrium system constrained by mass conservation and characterized by interisland repulsions. We construct an equilibrium shape diagram from experimentally determined free energy differences between island shapes and use it to resolve several anomalies that have been noted for the Ge on Si(001) system.

机译：我们引入化学热力学模型来解释在Si（001）上生长的Ge纳米晶岛的形成和退火行为。假设纳米晶体本质上是吸附的大分子，我们提出了一种简单的自由能表示形式，用于不同形状的岛通过它们所驻留的底物相互作用。纳米晶体的生长，消失和形状转变均与受质量守恒约束且以岛间排斥为特征的近平衡系统一致。我们根据实验确定的岛形之间的自由能差异构造了一个平衡形状图，并用它来解决Ge（Si）（001）系统上注意到的几个异常。

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《The journal of physical chemistry, B. Condensed matter, materials, surfaces, interfaces & biophysical》 |1998年第48期|共5页
作者
R. Stanley Williams; Gilberto Medeiros-Ribeiro; Theodore I. Kamins;
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正文语种 eng
中图分类物理化学（理论化学）、化学物理学;
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1. Equilibrium Shape Diagram for Strained Ge Nanocrystals on Si(001) [J] . R. Stanley Williams, Gilberto Medeiros-Ribeiro, Theodore I. Kamins, The journal of physical chemistry, B. Condensed matter, materials, surfaces, interfaces & biophysical . 1998,第48期

机译：Si（001）上应变的Ge纳米晶体的平衡形状图
2. Thermodynamics of Coherently-Strained Ge_xSi_(1-x) Nanocrystals on Si(001): Alloy Composition and Island Formation [J] . Gilberto Medeiros-Ribeiro, R. Stanley Williams Nano letters . 2007,第2期

机译：Si（001）上相干应变的Ge_xSi_（1-x）纳米晶体的热力学：合金成分和岛形成
3. Thermodynamics of coherently-strained GexSi1-x nanocrystals on Si(001): Alloy composition and island formation [J] . Medeiros-Ribeiro G, Williams RS Nano letters . 2007,第2期

机译：Si（001）上相干应变的GexSi1-x纳米晶体的热力学：合金成分和岛形成
4. Growth Mode Diagram for the Epitaxial Growth on the Vicinal Surface of Strained Si (001) [C] . Pil-Ryung Cha IUMRS International Conference in Asia . 2007

机译：应变Si（001）静脉表面上外延生长的生长模式图
5. Scanning probe microscopy studies of the highly strained epitaxy of indium arsenide on gallium arsenide(001) and scanning probe based imaging and manipulation of nanoscale three-dimensional objects. [D] . Ramachandran, T. R. 1998

机译：砷化镓（001）上砷化铟高度应变外延的扫描探针显微镜研究，以及基于扫描探针的纳米级三维物体的成像和操作。
6. Effect of surrounding environment on atomic structure and equilibrium shape of growing nanocrystals: gold in/on SiO2 [O] . F Ruffino, C Bongiorno, F Giannazzo, 2007

机译：周围环境对生长的纳米晶体的原子结构和平衡形状的影响：SiO2中的金/ SiO2
7. A codimension-two free boundary problem for the equilibrium shapes of a small three-dimensional island in an epitaxially strained solid film [O] . L. Shanahan, Brian Spencer 2002

机译：外延紧张的固体膜中小三维岛的平衡形状的分解 - 两个自由边界问题

Equilibrium Shape Diagram for Strained Ge Nanocrystals on Si(001)

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