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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Transport Property and Charge Trap Comparison for N-Channel Perylene Diimide Transistors with Different Air-Stability
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Transport Property and Charge Trap Comparison for N-Channel Perylene Diimide Transistors with Different Air-Stability

机译：具有不同空气稳定性的N沟道Per二酰亚胺晶体管的传输特性和电荷陷阱比较

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摘要

N-type organic field-effect transistors (OFETs), based on two perylene diimide semiconductors (PDI-8 and PDI-8CN2) exhibiting very different air sensitivities, have been fabricated on Si/SiO2 substrates. These OFETs have been electrically characterized in vacuum both in the dark and under white-light illumination by dc transfer and output curves, bias stress experiments and variable temperature measurements. In particular, the combination of variable temperature and light illumination experiments is shown to be a powerful tool to clarify the influence of charge trapping on the device operation. Even if, in vacuum, the air-sensitive PDI-8 devices display slightly better performances in terms of field-effect mobility and maximum current values, according to our results, charge transport in PDI-8 films is much more affected by charge trap states compared to PDI8-CN2 devices. These trapping centers are mainly active above 180 K, and their physical nature can be basically ascribed to the interaction between silanol groups and water molecules absorbed on SiO2 surface that is more active above the H2O supercooled transition temperature.
机译：已经在Si / SiO2衬底上制造了基于两种展现出非常不同的空气敏感性的per二酰亚胺半导体（PDI-8和PDI-8CN2）的N型有机场效应晶体管（OFET）。这些OFET已通过直流传输和输出曲线，偏压力实验和可变温度测量在黑暗和白光照明下在真空中进行了电气表征。尤其是，可变温度和光照试验的结合被证明是一种清晰的工具，可以阐明电荷陷阱对器件操作的影响。即使在真空中，对空气敏感的PDI-8器件在场效应迁移率和最大电流值方面表现出稍好一些的性能，根据我们的结果，PDI-8膜中的电荷传输受电荷陷阱状态的影响更大与PDI8-CN2设备相比。这些捕集中心主要在180 K以上具有活性，其物理性质基本上可以归因于硅烷醇基团与SiO2表面吸收的水分子之间的相互作用，而该分子在H2O过冷转变温度以上更具活性。

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