Synthesis of High-Purity Silicon Carbide Nanowires by a Catalyst-Free Arc-Discharge Method

Sheng-Cheng Chiu; Chao-Wei Huang; Yuan-Yao Li

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Synthesis of High-Purity Silicon Carbide Nanowires by a Catalyst-Free Arc-Discharge Method

机译：无催化剂电弧放电法合成高纯碳化硅纳米线

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High-purity silicon carbide (SiC) nanowires were synthesized through a catalyst-free arc-discharge process using silicon dioxide powders as a filler in a graphite anode. The characterization of the as-synthesized SiC nanowires showed that the diameter of the single-crystalline SiC nanowires was about 3-15 nm and the length was up to several micrometers. To understand the formation mechanism of the SiC nanowires in the absence of a catalyst, we found that oxygen plays a key role in the growth process and suggest that the growth mechanism of SiC nanowires is a catalyst-free vapor-solid (VS) mechanism. Photoluminescence measurements of the SiC nanowires revealed that the material emits blue-green light with a peak wavelength of 472 nm (CIE coordinates: x = 0.19, y = 0.24).

机译：通过无催化剂的电弧放电工艺，使用二氧化硅粉末作为石墨阳极中的填料，合成了高纯度的碳化硅（SiC）纳米线。合成后的SiC纳米线的表征表明，单晶SiC纳米线的直径约为3-15 nm，长度可达几微米。为了了解在没有催化剂的情况下SiC纳米线的形成机理，我们发现氧在生长过程中起着关键作用，并表明SiC纳米线的生长机理是无催化剂的气固（VS）机理。 SiC纳米线的光致发光测量表明，该材料发出的蓝绿色光的峰值波长为472 nm（CIE坐标：x = 0.19，y = 0.24）。

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《The journal of physical chemistry, C. Nanomaterials and interfaces》 |2007年第28期|共4页
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Sheng-Cheng Chiu; Chao-Wei Huang; Yuan-Yao Li;
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正文语种 eng
中图分类特种结构材料;表面现象的物理化学;
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1. Synthesis of High-Purity Silicon Carbide Nanowires by a Catalyst-Free Arc-Discharge Method [J] . Sheng-Cheng Chiu, Chao-Wei Huang, Yuan-Yao Li The journal of physical chemistry, C. Nanomaterials and interfaces . 2007,第28期

机译：无催化剂电弧放电法合成高纯碳化硅纳米线
2. Synthesis of High-Purity SiC Nanowires via Catalyst-Free Pyrolysis of SiO2/Si and Sponge-Like Graphene Oxide [J] . Shaoyun Chen, Wenjie Li, Bo Qu, ACS Omega . 2020,第39期

机译：通过SiO2 / Si和海绵状石墨烯氧化物的无催化剂热解合成高纯度SiC纳米线
3. Synthesis of silicon nanowires and nanoparticles by arc-discharge in water [J] . Shu-Man Liu, Mikihiro Kobayashi, Seiichi Sato, Chemical Communications . 2005,第37期

机译：水中电弧放电合成硅纳米线和纳米粒子
4. Synthesis of β-Silicon Carbide Nanowires by a Simple, Catalyst-Free Carbo-Thermal Evaporation Technique [C] . Majid S. Al-Ruqeishi, Roslan Md Nor, Yusoff Mohd Amin, International Conference on Nanoscience Nanotechnology . 2013

机译：一种简单，催化的碳化碳 - 热蒸发技术合成β-碳化硅纳米线
5. A Phase-Locked Loop in High-Temperature Silicon Carbide and General Design Methods for Silicon Carbide Integrated Circuits. [D] . Shepherd, Paul Darrow. 2014

机译：高温碳化硅中的锁相环和碳化硅集成电路的一般设计方法。
6. Synthesis and Photoluminescence Property of Silicon Carbide Nanowires Via Carbothermic Reduction of Silica [O] . Xiaogang Luo, Wenhui Ma, Yang Zhou, 2010

机译：二氧化硅的碳热还原法合成碳化硅纳米线及其光致发光性能
7. Synthesis of High-Purity SiC Nanowires via Catalyst-Free Pyrolysis of SiO2/Si and Sponge-Like Graphene Oxide [O] . Shaoyun Chen, Wenjie Li, Bo Qu, 2020

机译：通过SiO2 / Si和海绵状石墨烯氧化物的无催化剂热解合成高纯度SiC纳米线
8. Catalyst-free GaN Nanowire Growth and Optoelectronic Characterization [R] . Bertness, K. A., Sanford, N. A., Schlager, J. B. 2010

机译：无催化剂的GaN纳米线生长和光电特性

Synthesis of High-Purity Silicon Carbide Nanowires by a Catalyst-Free Arc-Discharge Method

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