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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Improved photon-to-current conversion efficiency with a nanoporous p-type NiO electrode by the use of a sensitizer-acceptor dyad
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Improved photon-to-current conversion efficiency with a nanoporous p-type NiO electrode by the use of a sensitizer-acceptor dyad

机译：通过使用敏化剂受体二元体，利用纳米多孔p型NiO电极提高了光子到电流的转换效率

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摘要

A peryleneimide sensitizer and a covalently linked peryleneimide-naphthalenediimide dyad were prepared and characterized by absorption and emission spectroscopies, electrochemistry, and spectroelectrochemistry. These compounds were chemisorbed on nanoporous nickel oxide electrodes and then studied by femtosecond transient absorption spectroscopy in the presence of a redox active electrolyte (I-3(-)/I-). In both compounds, upon excitation of the peryleneimide unit, an electron is efficiently ejected from the valence band of NiO to the dye with an average time constant of approximately 0.5 ps. In the case of the dyad, the excess electron is shifted further onto the naphtalenediimide unit, creating a new charge separated state. The latter exhibits a substantial retardation of the charge recombination between the hole and the reduced molecule compared with the peryleneimide sensitizer. The photoaction spectra of a sandwich dye-sensitized solar cell (DSSC) composed of NiO films and these new dyes were recorded, and the absorbed-photon to current conversion efficiency (APCE) was three times higher with the dyad than with the peryleneimide dye: 45%. The maximum APCE of approximately 45% is the highest value reported for a DSSC based on a nanostructured metal oxide p-type semiconductor.
机译：制备了ylene酰亚胺敏化剂和共价连接的per酰亚胺-萘二酰亚胺二元化合物，并通过吸收和发射光谱，电化学和光谱电化学对其进行了表征。这些化合物被化学吸附在纳米多孔氧化镍电极上，然后在存在氧化还原活性电解质（I-3（-）/ I-）的情况下通过飞秒瞬态吸收光谱研究。在这两种化合物中，在per酰亚胺单元的激发下，电子均以约0.5 ps的平均时间常数有效地从NiO的价带发射到染料上。在二重体的情况下，过量的电子进一步转移到萘二酰亚胺单元上，从而产生新的电荷分离状态。与per酰亚胺敏化剂相比，后者显示出空穴和还原分子之间的电荷复合的显着延迟。记录了由NiO膜和这些新染料组成的夹心式染料敏化太阳能电池（DSSC）的光行动能谱，用二元组得到的吸收光子到电流的转换效率（APCE）比per酰亚胺高出三倍： 45％。大约45％的最大APCE是基于纳米结构的金属氧化物p型半导体的DSSC的最高报道值。

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