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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Efficient Charge Transport through a Metal Oxide Semiconductor in the Nanocomposite Film with Tris(2,2'-bipyridine)ruthenium(II)
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Efficient Charge Transport through a Metal Oxide Semiconductor in the Nanocomposite Film with Tris(2,2'-bipyridine)ruthenium(II)

机译：三（2,2'-联吡啶）钌（II）在纳米复合薄膜中通过金属氧化物半导体的高效电荷传输

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摘要

A nanocomposite film of tungsten trioxide (WO_3) and [Ru(bpy)_3]~2+ (bpy = 2,2'-bipyridine) (denoted as Ru-WO_3) was prepared from an aqueous colloidal triad solution containing peroxotungstic acid, [Ru(bpy)_3]~2+, and poly(sodium 4-styrenesulfonate) by an electrodeposition technique. The electrochemical features of the Ru-WO3 film were investigated using cyclic voltammetry (CV) and potential-step chronoamperospectrometry (PSCAS) techniques, compared with those in a [Ru(bpy)_3]~2+/Nafion (Ru-Nf) film. PSCAS data spectrophotometrically showed that Ru~II is completely oxidized for 0.3 s in the Ru-WO3 film, in contrast to the corresponding reaction completed for 30 s in the Ru-Nf film. The apparent diffusion coefficient (D_app = (0.1-1.1) × 10~-7 cm~2 ~s-1) for charge transport (CT) by a Ru~II/Ru~III redox in the Ru-WO_3 film was higher than that (2.4 × 10~-10 cm~2 s~-1) in the Ru-Nf film by 2 or 3 orders of magnitude. Activation energy (E_a) for CT (14.1 kJ mol~-1) for the Ru-WO_3 film was 3.5 times lower than that (E_a = 49.8 kJ mol~-1) for the Ru-Nf film. The lower Ea could be responsible for the faster CT in the Ru-WO3 film than the Ru-Nf film. Dapp in the Ru-WO3 film increased linearly with an increase of the final applied potential (E_f) for PSCAS from 1.2 to 1.5 V vs SCE and saturated above Ef = 1.5 V. The mechanism for CT in the Ru-WO3 film is proposed, in which electrons are injected from [Ru(bpy)_3]~2+ into the conduction band (CB) of WO_3 and go through there to a collector electrode.
机译：由含过氧钨酸的胶态三元水溶液制备三氧化钨（WO_3）和[Ru（bpy）_3]〜2 +（bpy = 2,2'-联吡啶）（表示为Ru-WO_3）的纳米复合膜。通过电沉积技术将Ru（bpy）_3]〜2 +和聚4-苯乙烯磺酸钠与[Ru（bpy）_3]〜2 + / Nafion（Ru-Nf）薄膜相比，使用循环伏安法（CV）和电位步进计时安培光谱法（PSCAS）研究了Ru-WO3薄膜的电化学特性。 。 PSCAS数据分光光度法显示Ru-II在Ru-WO3膜中被完全氧化0.3 s，而Ru-Nf膜中相应的反应在30 s中完成。 Ru-WO_3薄膜中Ru〜II / Ru〜III氧化还原对电荷转移（CT）的表观扩散系数（D_app =（0.1-1.1）×10〜-7 cm〜2〜s-1）大于Ru-Nf膜中的（2.4×10〜-10 cm〜2 s〜-1）2或3个数量级。 Ru-WO_3薄膜的CT活化能（E_a）（14.1 kJ mol〜-1）比Ru-Nf薄膜的活化能（E_a = 49.8 kJ mol〜-1）低3.5倍。较低的Ea可能是Ru-WO3薄膜比Ru-Nf薄膜具有更快的CT的原因。 Ru-WO3膜中的Dapp随PSCAS的最终施加电势（E_f）从SCE增至1.2 V至1.5 V并在Ef = 1.5 V以上饱和而线性增加。提出了Ru-WO3膜中CT的机理，其中电子从[Ru（bpy）_3]〜2 +注入到WO_3的导带（CB）中，并穿过那里到达集电极。

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