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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Electronic Band Structures and Photochemical Properties of La—Ga-based Oxysulfides
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Electronic Band Structures and Photochemical Properties of La—Ga-based Oxysulfides

机译：La-Ga基氧硫化物的电子能带结构和光化学性质

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摘要

The oxysulfides LaGaS2O and La3GaS5O are prepared and characterized through measurements of photo-electrochemical properties and photocatalytic activity. The band gap energies of LaGaS2O and La3GaS5O are estimated from diffuse reflectance spectra to be 3.0 and 2.3 eV, respectively. The oxide LaGaO3 exhibits a band gap of 4.4 eV. The band gap thus appears to narrow with increasing sulfur content. La3GaS5O prepared on a transparent conducting electrode is shown to function as an n-type semiconductor in the presence of 0.01 M Na2S-Na2SO3 and 0.1 M Na2SO4 under visible irradiation (λ ≥ 420 nm), whereas the LaGaS2O electrode only produces anodic photocurrent under ultraviolet light (λ ≥ 291 nm). LaGaS2O and La3GaS5O have similar conduction band bottoms, although La3GaS5O exhibits a lower valence band top. These oxysulfides are demonstrated to evolve H2 or O2 from water containing hole scavengers (Na2S—Na2SO3) or an electron scavenger (Ag~+), in reasonable agreement with the estimated band gap position.
机译：制备了氧硫化物LaGaS2O和La3GaS5O，并通过测量其光电化学性能和光催化活性对其进行了表征。根据漫反射光谱估计，LaGaS2O和La3GaS5O的带隙能分别为3.0和2.3 eV。氧化物LaGaO3的带隙为4.4 eV。因此，带隙似乎随着硫含量的增加而变窄。显示在透明导电电极上制备的La3GaS5O在可见光（λ≥420 nm）下存在0.01 M Na2S-Na2SO3和0.1 M Na2SO4的情况下充当n型半导体，而LaGaS2O电极仅在紫外光下产生阳极光电流光（λ≥291 nm）。 LaGaS2O和La3GaS5O具有相似的导带底部，尽管La3GaS5O的价带顶部较低。这些氧硫化物被证明可以从含水的空穴清除剂（Na2S-Na2SO3）或电子清除剂（Ag〜+）释放出H2或O2，并且与估算的带隙位置合理吻合。

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