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首页> 外文期刊>Surface & Coatings Technology >Structural and mechanical properties of a-C:H and Si doped a-C:H thin films grown by LF-PECVD
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Structural and mechanical properties of a-C:H and Si doped a-C:H thin films grown by LF-PECVD

机译：通过LF-PECVD生长的a-C：H和掺Si的a-C：H薄膜的结构和力学性能

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摘要

Amorphous hydrogenated carbon (a-C:H) and Silicon doped a-C:H (Si-DLC) and a-C:H/Si-DLC multilayered films were deposited by low frequency plasma enhanced chemical vapour deposition (LF PECVD). Influences of plasma power and substrate temperature were first investigated on structural and mechanical properties of a-C:H films elaborated from cyclohexane–hydrogen mixtures. The hybridation ratio, Csp2/Csp3, was evaluated by means of Raman spectroscopy and High Resolution Solid-State Nuclear Magnetic Resonance (SSNMR). Stress measurements were realised by the substrate bending method. Nanoindentation and ball on disk tribometer were used in order to determine nanohardness, Young modulus and friction behaviours respectively. Si-DLC films were then elaborated by incorporating tetramethylsilane in the previous gas mixtures. Those layers revealed a significantly reduced stress level comparing to a-C:H films without a dramatic loss of mechanical properties. Finally a-C:H and Si-DLC layers were associated to elaborate a multilayered system which presents mechanical and tribological properties equivalent to an a-C:H monolayer properties while maintaining a lower residual stress level.
机译：通过低频等离子体增强化学气相沉积（LF PECVD）沉积非晶态氢化碳（a-C：H）和掺硅的a-C：H（Si-DLC）和a-C：H / Si-DLC多层膜。首先研究了等离子体功率和衬底温度对由环己烷-氢混合物制成的a-C：H薄膜的结构和力学性能的影响。通过拉曼光谱和高分辨率固态核磁共振（SSNMR）评估杂交比Csp2 / Csp3。应力测量是通过基板弯曲法实现的。为了测定纳米硬度，杨氏模量和摩擦性能，分别使用了纳米压痕和圆盘摩擦球仪。然后通过在先前的气体混合物中掺入四甲基硅烷来制作Si-DLC膜。与a-C：H膜相比，这些层显示出显着降低的应力水平，而机械性能没有明显损失。最后，将a-C：H和Si-DLC层结合起来，制成了多层系统，该系统具有与a-C：H单层性能相同的机械和摩擦学性能，同时保持了较低的残余应力水平。

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