Quantitative XPS analysis of hydrosilated 1-alkene and 1-alkyne at terraced, dihydrogen-terminated, 1 x 1 (100) silicon

Cerofolini GF; Galati C; Reina S; Renna L

首页> 外文期刊>Surface and Interface Analysis: SIA: An International Journal Devoted to the Development and Application of Techniques for the Analysis of Surfaces, Interfaces and Thin Films >Quantitative XPS analysis of hydrosilated 1-alkene and 1-alkyne at terraced, dihydrogen-terminated, 1 x 1 (100) silicon

【24h】

Quantitative XPS analysis of hydrosilated 1-alkene and 1-alkyne at terraced, dihydrogen-terminated, 1 x 1 (100) silicon

机译：梯形，双氢封端的1 x 1（100）硅氢化硅化1-烯烃和1-炔烃的XPS定量分析

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

A quantitative angle-resolved XPS analysis was carried out of the carbonaceous films resulting from the derivatization under mild thermal activation of nearly flat, terraced, dihydrogen-terminated, 1 x 1 (100) Si with 1-octene or 1-octyne. The analysis of the C 1s signal gave evidence for the presence of carbon in carbide configuration (Si-C bonds) at the substrate-film interface, in addition to the alkanic carbon and adventitious oxidized carbon (C-O bonds) produced by the oxidizing impurities flawing the reaction. Assuming the surface as uniformly covered, the analysis showed that for both reactants the films were closely packed. Copyright (c) 2006 John Wiley & Sons, Ltd.

机译：对碳膜薄膜进行了定量的角分辨XPS分析，该碳薄膜是在温和的热活化条件下，用1-辛烯或1-辛炔将几乎平坦的，梯级的，二氢封端的1 x 1（100）Si衍生化而得到的。对C 1s信号的分析提供了证据，证明了基膜-膜界面处存在碳化物构型的碳（Si-C键），此外还存在由氧化性杂质缺陷产生的链烷碳和不定的氧化碳（CO键）反应。假设表面被均匀覆盖，分析表明对于两种反应物，膜都紧密堆积。版权所有（c）2006 John Wiley＆Sons，Ltd.

著录项

来源
《Surface and Interface Analysis: SIA: An International Journal Devoted to the Development and Application of Techniques for the Analysis of Surfaces, Interfaces and Thin Films》 |2006年第3期|共13页
作者
Cerofolini GF; Galati C; Reina S; Renna L;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类物理学;
关键词
silicon functionalization; alkene and alkyne hydrosilation; (100) silicon; angle-resolved XPS; depth profiling; EARLY OXYNITRIDATION STAGES; ALKYL MONOLAYERS; ORGANIC MONOLAYERS; 1X1(100) SILICON; SURFACE; SI; FUNCTIONALIZATION; EXPOSURE; N-2-N2O; GROWTH;

机译：硅官能化;烯烃和炔烃的硅氢化;（100）硅;角分辨XPS;深度剖析;早期氧化阶段;烷基单分子膜;有机单分子膜;1X1（100）硅;表面;SI;功能化;曝光;N-2-N2O;成长;

相似文献

外文文献
中文文献
专利

1. Quantitative XPS analysis of hydrosilated 1-alkene and 1-alkyne at terraced, dihydrogen-terminated, 1 x 1 (100) silicon [J] . Cerofolini GF, Galati C, Reina S, Surface and Interface Analysis: SIA: An International Journal Devoted to the Development and Application of Techniques for the Analysis of Surfaces, Interfaces and Thin Films . 2006,第3期

机译：梯形，双氢封端的1 x 1（100）硅氢化硅化1-烯烃和1-炔烃的XPS定量分析
2. Self-assembly of organic monolayers onto hydrogen-terminated silicon: 1-alkynes are better than 1-alkenes [J] . Scheres L., Giesbers M., Zuilhof H. Langmuir: The ACS Journal of Surfaces and Colloids . 2010,第13期

机译：有机单分子层在氢封端的硅上的自组装：1-炔优于1-烯烃
3. Static time-of-flight secondary ion mass spectrometry of monolayers on scribed silicon derived from 1-alkenes, 1-alkynes, and 1-haloalkanes [J] . Lua YY., Niederhauser TL., Matheson R., Langmuir: The ACS Journal of Surfaces and Colloids . 2002,第12期

机译：从1-烯烃，1-炔烃和1-卤代烷烃衍生的划线硅上单层的静态飞行时间二次离子质谱
4. Experimental Study of Mobility in 110- and 100-Directed Multiple Silicon Nanowire GAA MOSFETs on (100) SOI [C] . Jiezhi Chen, Takuya Saraya, Kousuke Miyaji, Symposium on VLSI Technology . 2008

机译：110 - 和100 - 在（100）SOI上的迁移率的实验研究
5. Quantitative nanoscale characterization of undulated silicon-germanium/silicon(100) epitaxial thin films. [D] . Wu, Chi-Chin. 2008

机译：起伏的硅锗/硅（100）外延薄膜的定量纳米尺度表征。
6. S100. COGNITIVE ENHANCEMENT THERAPY IN SCHIZOPHRENIA: A QUANTITATIVE AND QUALITATIVE ANALYSIS OF PATIENTS’ EXPERIENCES [O] . Synthia Guimond, Feng Gu, Leighanne Ormston, 2019

机译：S100。精神分裂症的认知增强治疗：对患者经验的定量和定性分析
7. Calculated Pre-exponential Factors and Energetics for Adatom Hopping on Terraces and Steps of Cu(100) and Cu(110) [O] . Yildirim, Handan, Kara, Abdelkader, Durukanoglu, Sondan, 2005

机译：计算吸附前的跳跃指数因子和能量学 Cu（100）和Cu（110）的阶梯和台阶
8. Quantitative Analysis of Defects in Silicon. Silicon Sheet Growth Development for the Large Are Silicon Sheet Task of the Low-Cost Solar Array Project [R] . Natesh, R., Smith, J. M., Bruce, T., 1980

机译：硅中缺陷的定量分析。低成本太阳能电池阵列项目的硅片增长开发

Quantitative XPS analysis of hydrosilated 1-alkene and 1-alkyne at terraced, dihydrogen-terminated, 1 x 1 (100) silicon

摘要

著录项

相似文献

相关主题

期刊订阅