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Nanometer-sized passageways within CuTCNQ crystalline grains prepared by spontaneous electrolyses

机译:通过自发电解制备的CuTCNQ晶粒内的纳米级通道

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摘要

Since R. S. Potember and his co-operators reported in 1979 that there was a current-controlled bistable electrical switching phenomenon in the copper charge-transfer (CT) comples of 7,7',8,8'-tetracyanoquinodimethane (TCNQ), electric, optoelectronic threshold-switching and memory effects have been found in succession within the copper and silver CT complexes of TCNQ and its derivatives. These potential characteristics usually correspond to a field-induced partial phase transition in material that generates either a highly conducting domain or a highly conducting channel, Some reported results show that the initiation of this conducting channel may be greatly affected by the nature of the metal/ semiconductor thin-film interfaces and the morphology of the film. The interface conditions and the film morphology are determined by the synthetic method chosen and can be altered by varying the conditions of film formation.
机译:自从RS Potember及其合作者在1979年报告说,在电的7,7',8,8'-四氰基喹二甲烷(TCNQ)的铜电荷转移(CT)组件中存在电流控制的双稳态电开关现象。在TCNQ及其衍生物的铜和银CT配合物中,相继发现了光电阈值切换和记忆效应。这些潜在的特性通常对应于材料中由电场引起的部分相变,该相变会生成高传导域或高传导通道。一些报道的结果表明,该传导通道的启动可能会受到金属/半导体薄膜界面和薄膜的形态。界面条件和膜的形态是通过选择的合成方法确定的,可以通过改变成膜条件来改变。

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