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Effect of Annealing Temperature on the Microstructure and Resistivity of Ge_2Sb_2Te_5 Films

机译：退火温度对Ge_2Sb_2Te_5薄膜微结构和电阻率的影响

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摘要

The effect of annealing temperature on crystallization of amorphous Ge_2Sb_2Te_5 films with thickness of 40 nm is studied by TEM and AFM methods. The relationship between microstructure and resistivity of the Ge_2Sb_2Te_5 film is investigated. From the TEM measurements, the grain size of crystallites increases gradually as the annealing temperature increases. When the annealing temperature is too high, voids are formed, which may originate from evaporation of the Ge_2Sb_2Te_5 film at the elevated temperatures, formation of sink, being nucleated by residual vacancies, and surface roughness. The resistivity of the Ge_2Sb_2Te_5 film decreases with the increasing annealing temperature and has slight changes when the temperature is higher than 400 degrees C. Phase transitions and scattering of crystallite boundaries may be the major factors affecting the resistivity of the Ge_2Sb_2Te_5 film.
机译：通过TEM和AFM方法研究了退火温度对40nm厚的非晶Ge_2Sb_2Te_5薄膜晶化的影响。研究了Ge_2Sb_2Te_5薄膜的微观结构与电阻率之间的关系。从TEM测量，随着退火温度的升高，微晶的晶粒尺寸逐渐增大。当退火温度太高时，会形成空隙，这可能是由于在高温下Ge_2Sb_2Te_5薄膜的蒸发，形成凹陷，被残余空位成核以及表面粗糙度所致。 Ge_2Sb_2Te_5薄膜的电阻率随退火温度的升高而降低，而当温度高于400摄氏度时，电阻率变化很小。相变和微晶边界的散射可能是影响Ge_2Sb_2Te_5薄膜电阻率的主要因素。

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