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Spin Coulomb Dragging Inhibition of Spin-Polarized Electric Current Injecting into Organic Semiconductors

机译:自旋极化电流注入有机半导体的自旋库仑拖动抑制

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摘要

We introduce a one-dimensional spin injection structure comprising a ferromagnetic metal and a nondegenerate organic semiconductor to model electric current polarizations. With this model we analyse spin Coulomb drag g in g (SCD) effects on the polarization under various electric fields, interface and conductivity conditions. The results show that the SCD inhibits the current polarization. Thus the SCD inhibition should be well considered for accurate evaluation of current polarization in the design of organic spin devices.
机译:我们引入一维自旋注入结构,该结构包括铁磁金属和非简并有机半导体以模拟电流极化。利用该模型,我们分析了在各种电场,界面和电导率条件下自旋库仑阻力g(SCD)对极化的影响。结果表明,SCD抑制了电流极化。因此,在有机自旋器件的设计中应充分考虑SCD抑制作用,以准确评估电流极化。

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