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Piezoresistivity studies of diamond films

机译：金刚石膜的压阻研究

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摘要

Like natural diamond, diamond thin films prepared by chemical vapour deposition also have various unique properties. They possess a potential application for high temperature, high speed, high power and anti-radiation devices. Recently, it was found that polycrystalline p-type diamond films can also have a much stronger piezoresistive effect, which especially is remarkably enhanced with increasing temperature. Aslam et al. first reported the piezoresistive effect in both polycrystalline p-type and homoepitaxial diamond films. Their experimental results have shown that the piezoresistive gauge factor of homoepitaxial diamond films was at 500 microstrain (at least 550) at room temperature, exceeding that of the crystalline Silicon (120) and polycrystalline silicon (30), but that of the polycrystalline diamond films was only 6. Experiments by Dorsch et al. demonstrated that the piezoresistive gauge factor of polycrystalline p-type diamond films was 5.4 at room temperature, and then increased to 13.7 with increasing temperature from 27 to 60 °C. As mentioned above, the piezoresistive effect of polycrystalline diamond films has a lower sensitivity than that of silicon. This is due to the stiffness of the relatively thick silicon substrate used in their research. So large parts of the stress applied to the substrate have not been transmitted to the diamond films. Aslam estimated that the strain in the surface of the diamond films was about 31% that in the top of the substrate. This will lower the measurement sensitivity.
机译：与天然钻石一样，通过化学气相沉积制备的钻石薄膜也具有各种独特的性能。它们具有高温，高速，大功率和抗辐射设备的潜在应用。最近，发现多晶p型金刚石膜还可以具有更强的压阻效应，尤其是随着温度升高而显着增强。 Aslam等。首先报道了在多晶p型和同质外延金刚石膜中的压阻效应。他们的实验结果表明，在室温下，同质外延金刚石膜的压阻应变系数为500微应变（至少550），超过了结晶硅（120）和多晶硅（30），但是超过了多晶金刚石膜。只有6。Dorsch等人的实验。证明多晶p型金刚石薄膜的压阻应变系数在室温下为5.4，然后随着温度从27升高到60°C而增加到13.7。如上所述，多晶金刚石膜的压阻效应具有比硅更低的灵敏度。这是由于他们的研究中使用的相对较厚的硅基板的刚度。因此，施加到基材上的大部分应力尚未传递到金刚石膜上。 Aslam估计金刚石薄膜表面的应变约为衬底顶部应变的31％。这将降低测量灵敏度。

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