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Optical properties of silicon carbonitride films produced by plasma-induced decomposition of organic silicon compounds

机译:等离子体诱导有机硅化合物分解产生的碳氮化硅膜的光学特性

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摘要

Optical properties (refractive index; UV, visible, and IR transmission spectra; optical bandgap) of silicon carbonitride SiC (x) N (y) films, promising materials for silicon photonic devices and microelectronics, have been studied. The films have been synthesized by rf plasma-enhanced chemical vapor deposition with thermal activation from parent organosilicon compounds in mixtures with helium, ammonia, nitrogen, or oxygen at a reduced pressure and temperatures of 373-1023 K. The parent substances used are aminosilane- and silazane-series organosilicon precursors.
机译:已经研究了碳氮化硅SiC(x)N(y)薄膜的光学性质(折射率; UV,可见光和IR透射光谱;带隙),这是用于硅光子器件和微电子技术的有希望的材料。薄膜是通过射频等离子体增强化学气相沉积法合成的,并在373-1023 K的减压温度下,与氦,氨,氮或氧的混合物中的母体有机硅化合物进行热活化而得到热活化。所用的母体物质为氨基硅烷和硅氮烷系列有机硅前体。

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