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首页> 外文期刊>Zeitschrift fur Anorganische und Allgemeine Chemie >Crystal Structures of NH_4GaF_4 and EH_4GaF_4 centre dot NH_3
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Crystal Structures of NH_4GaF_4 and EH_4GaF_4 centre dot NH_3

机译:NH_4GaF_4和EH_4GaF_4中心点NH_3的晶体结构

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The oxidation of gallium metal with NH_4F at 350 deg C yields single crystals of NH_4GaF_4 (tetragonal, I4/mcm, Z = 4, a = 527.1(1), c = 1281.6(3) pm, isotypic with NH_4AlF_4). [GaF_6] octahedra share common vertices thereby forming layers that are stacked in the [001] direction alternatively with NH_4~+ tetrahedra. Single crystals of NH_4GaF_4 . NH_3 were obtained by oxidation of gallium with NH_4HF_2 at 300 deg C (monoclinic, I2/m, Z = 4, a = 745.2(2), b = 676.7(2), c = 976.0(3) pm, #beta# = 105.52(4) deg). The addition of one equivalent NH_3 leads to a closest packing of rods alternatively built up from [GaF_6] and [Ga(NH_3)_2F_4] octahedra. NH_4~+ tetrahedra are within free channels between the packing of the complex anions.
机译:在350℃下用NH_4F氧化镓金属会生成NH_4GaF_4单晶(四方晶,I4 / mcm,Z = 4,a = 527.1(1),c = 1281.6(3)pm,与NH_4AlF_4同型)。 [GaF_6]八面体共享共同的顶点,从而形成在[001]方向上与NH_4〜+四面体交替堆叠的层。 NH_4GaF_4的单晶。 NH_3是通过在300℃下用NH_4HF_2氧化镓而获得的(单斜晶系,I2 / m,Z = 4,a = 745.2(2),b = 676.7(2),c = 976.0(3)pm,#beta#= 105.52(4)度)。添加一个当量的NH_3会导致杆的最紧密堆积,这些杆也可以由[GaF_6]和[Ga(NH_3)_2F_4]八面体构建而成。 NH_4〜+四面体在复合阴离子的堆积之间的自由通道内。

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