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首页> 外文期刊>Zeitschrift fur Anorganische und Allgemeine Chemie >Structure and magnetic properties of Ce3Ge0.66In4.34 and Ce11Ge4.74In5.26
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Structure and magnetic properties of Ce3Ge0.66In4.34 and Ce11Ge4.74In5.26

机译：Ce3Ge0.66In4.34和Ce11Ge4.74In5.26的结构和磁性

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摘要

New indides Ce3Ge0.66In4.34 and Ce11Ge4.74In5.26 were synthesized from the elements by arc-melting and subsequent annealing at 870 K. Single crystals were grown through special annealing procedures in sealed tantalum tubes in a high-frequency furnace. Both compounds were investigated on the basis of X-ray powder and single crystal data: I4/mcm, La3GeIn4 type, a = 848.8(1), c = 1192.0(2) pm, Z = 4, wR2 = 0.0453, 499 F-2 values, 17 variables for Ce3Ge0.66In4.34 and I4/mmm, Sm11Ge4In6 type (ordered version of the Ho11Ge10 type), a = 1199.3(2), c = 1662.0(3)pm, wR2 = 0.0507, 1217 F-2 values, 41 variables for Ce11Ge4.74In5.26. The Ce3Ge0.66In4.34 Structure shows a mixed Ge/In occupancy on the 4c Wyckoff position. This site is octa-hedrally coordinated by cerium atoms. These octahedra share all edges, leading to a three-dimensional network. The latter is penetrated by a two-dimensional indium substructure which consists of flattened tetrahedra at In-In distances of 291 and 300 pm. The Ce11Ge4.74In5.26 structure contains three crystallographically independent germanium sites. The latter are coordinated by eight or nine cerium neighbors. These CN8 and CN9 polyhedra are condensed to a complex network which is penetrated by a three-dimensional indium network with In-In distances of 301-314 pm. The 16m site shows a mixed In/Ge occupancy Chemical bonding in both compounds is dominated by the p elements. Both ternaries studied exhibit localized magnetism due to the presence of Ce3+ ions. The compound Ce3GeIn4 remains paramagnetic down to 1.72 K, whereas Ce11Ge4In6 orders ferromagnetically at T-C = 7.5 K.
机译：通过电弧熔化和随后在870 K的退火温度，由元素合成了新的In Ce3Ge0.66In4.34和Ce11Ge4.74In5.26。通过特殊的退火程序，在高频炉中的密封钽管中生长了单晶。根据X射线粉末和单晶数据研究了这两种化合物：I4 / mcm，La3GeIn4型，a = 848.8（1），c = 1192.0（2）pm，Z = 4，wR2 = 0.0453、499 F- 2个值，Ce3Ge0.66In4.34和I4 / mmm，Sm11Ge4In6类型（Ho11Ge10类型的订购版）的17个变量，a = 1199.3（2），c = 1662.0（3）pm，wR2 = 0.0507、1217 F-2值，Ce11Ge4.74In5.26的41个变量。 Ce3Ge0.66In4.34结构在4c Wyckoff位置显示混合的Ge / In占有率。该位点由铈原子八面体配位。这些八面体共享所有边缘，从而形成三维网络。后者被二维铟子结构穿透，该子结构由In-In距离为291和300 pm的扁平四面体组成。 Ce11Ge4.74In5.26结构包含三个晶体学独立的锗位点。后者由八个或九个铈邻居协调。这些CN8和CN9多面体被浓缩成一个复杂的网络，该网络被In-In距离为301-314 pm的三维铟网络穿透。 16m处显示In / Ge混合占据，这两种化合物中的化学键主要由p元素决定。由于存在Ce3 +离子，研究的两个三元均表现出局部磁性。化合物Ce3GeIn4在低至1.72 K时仍保持顺磁性，而Ce11Ge4In6在T-C = 7.5 K时呈铁磁有序。

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