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Ab initio calculation of elastic constants and electronic properties of ZnSe and ZnTe under uniaxial strain

机译:单轴应变下ZnSe和ZnTe的弹性常数和电子性质的从头算

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The second and third order elastic constants of ZnSe and ZnTe, the electronic deformation potentials, and other bulk properties under uniaxial strains are calculated. We used first-principles density-functional theory applied to supercells with the plane wave method and energy cutoffs of 30-40 Ry. The 3d states of Zn were treated as core states but a nonlinear core correction was used for the exchange and correlation energy. We determined the internal strain parameter and calculated the deformation density of unstrained ZnSe with and without Zn-3d valence states. The change of the electron density in ZnSe due to uniaxial strain in [001], [110], and [111] directions is demonstrated. We also present the density of states and the change of the deformation density of bulk ZnTe due to biaxial strain like in a thin epilayer on a GaAs(001) substrate. The change of the density of states is also discussed here. Finally, the Luttinger parameters of ZnSe are calculated.
机译:计算了单轴应变下ZnSe和ZnTe的二阶和三阶弹性常数,电子变形势和其他体积特性。我们使用第一原理密度泛函理论通过平面波方法和30-40 Ry的能量截止应用于超级电池。 Zn的3d态被视为核心态,但非线性核心校正被用于交换和相关能。我们确定了内部应变参数,并计算了具有和不具有Zn-3d价态的未应变ZnSe的变形密度。证明了由于[001],[110]和[111]方向的单轴应变,ZnSe中电子密度的变化。我们还提出了状态密度和由于双轴应变而在GaAs(001)衬底上的薄外延层中引起的整体ZnTe变形密度的变化。这里还讨论了状态密度的变化。最后,计算了ZnSe的Luttinger参数。

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