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首页> 外文期刊>Dalton transactions: An international journal of inorganic chemistry >Preparation and thermoelectric properties of sintered type-I clathrates K8GaxSn46-x
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Preparation and thermoelectric properties of sintered type-I clathrates K8GaxSn46-x

机译：I型烧结包合物K8GaxSn46-x的制备及其热电性能

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摘要

Polycrystalline clathrate samples of nominal K8GaxSn46-x were prepared by the spark plasma sintering method to investigate their crystal structures, mobilities and thermoelectric properties. The samples almost had a single-phase type-I clathrate structure, and their relative densities reached as high as 98%. The room-temperature mobility of the K8Ga8Sn38 sample was 25 cm(2) V-1 s(-1), which substantially exceeded the reported mobilities of Rb- and Cs-containing Sn clathrates. Moreover, the mobility was larger than those of the type-I Ba8Ga16Sn30, which had more Ga substituting atoms in unit cell. A higher mobility might accordingly be achieved in thermoelectric clathrates with a smaller number of substituting atoms. Their electrical conductivities and Seebeck coefficients in the temperature range 300-450 K were typical of n-type doped semiconductors in the extrinsic region while their room-temperature lattice thermal conductivities were as low as similar to 11 mW cm(-1) K-1. The maximum dimensionless figure of merit ZT was estimated to be 0.27 at 490 K from the Seebeck coefficient of -262 mu V K-1 and the electrical conductivity of 96 S cm(-1) for the K8Ga8Sn38 sample with a carrier concentration of 2.9 x 10(19) cm(-3)
机译：通过火花等离子体烧结法制备了标称K8GaxSn46-x的多晶包合物样品，以研究其晶体结构，迁移率和热电性能。样品几乎具有单相I型笼形结构，其相对密度高达98％。 K8Ga8Sn38样品的室温迁移率是25 cm（2）V-1 s（-1），大大超过了报道的含Rb和Cs的Sn包合物的迁移率。而且，迁移率大于I型Ba8Ga16Sn30的迁移率，后者在晶胞中具有更多的Ga取代原子。因此，在具有较小数目的取代原子的热电包合物中可以实现较高的迁移率。它们的电导率和塞贝克系数在300-450 K的温度范围内是非本征区n型掺杂半导体的典型特征，而它们的室温晶格热导率则低至11 mW cm（-1）K-1 。根据-262 mu V K-1的塞贝克系数和96 S cm（-1）的电导率，对于K8Ga8Sn38样品（载流子浓度为2.9 x），最大无因次系数ZT估计为490 K时为0.27。 10（19）厘米（-3）

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