Oriented growth of diamond on (0001) surface of hexagonal GaN

Masato Oba; Takashi Sugino

首页> 外文期刊>Diamond and Related Materials >Oriented growth of diamond on (0001) surface of hexagonal GaN

【24h】

Oriented growth of diamond on (0001) surface of hexagonal GaN

机译：六角形GaN（0001）表面上金刚石的定向生长

获取原文

获取原文并翻译 | 示例

获取外文期刊封面封底 >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Oriented growth of diamond has been attempted on hexagonal GaN layers using conventional microwave plasma-assisted chemical vapor deposition (MP-CVD). GaN layers used as a substrate are grown on sapphire substrates by metal organic themical vapor deposition (MO-CVD). Carburization, bias-enhanced nucleation and crystal growth processes are successively carried out. Oriented growth of diamond grains is demonstrated by the scanning electron microscopic image. It is suggested that an X-ray diffraction signal detected at 2θ = 43.9°is due to the (111) face of diamond. Moreover, a Raman signal which peaked at 1333 cm~(-1) supports the growth of diamond.

机译：已经尝试使用常规微波等离子体辅助化学气相沉积（MP-CVD）在六角形GaN层上定向生长金刚石。通过金属有机介电气相沉积（MO-CVD）在蓝宝石衬底上生长用作衬底的GaN层。依次进行渗碳，偏置增强形核和晶体生长过程。扫描电子显微镜图像证明了金刚石晶粒的定向生长。建议在2θ= 43.9°处检测到的X射线衍射信号是由于金刚石的（111）面引起的。此外，在1333 cm〜（-1）处达到峰值的拉曼信号支持钻石的生长。

著录项

来源
《Diamond and Related Materials》 |2001年第3期|共4页
作者
Masato Oba; Takashi Sugino;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类电热工业、高温制品工业;第Ⅳ族非金属元素及其无机化合物;人造宝石、合成宝石的生产;
关键词
diamond; oriented growth; gallium nitride; microwave plasma chemical vapor deposition;

机译：金刚石;定向生长;氮化镓;微波等离子体化学气相沉积;

相似文献

外文文献
中文文献
专利

1. Oriented growth of diamond on (0001) surface of hexagonal GaN [J] . Masato Oba, Takashi Sugino Diamond and Related Materials . 2001,第3a7期

机译：六角形GaN（0001）表面上金刚石的定向生长
2. Solid C_60 growth on hexagonal GaN (0001) surface [J] . H.Takashima, M.Nakaya, A.Yamamoto Journal of Crystal Growth . 2001,第期

机译：六方氮化镓（0001）表面上的固体C_60生长
3. Heterostructure growth of a single-crystal hexagonal AIN (0001) layer on cubic diamond (111) surface [J] . Kazuyuki Hirama, Yoshitaka Taniyasu, Makoto Kasu Journal of Applied Physics . 2010,第1期

机译：立方金刚石（111）表面上单晶六角AIN（0001）层的异质结构生长
4. Solid C_960) growth on hexagonal GaN (0001) surface [C] . A. Hashimoto, A. Yamamoto, M. Nakaya, International conference on molecular beam epitaxy . 2001

机译：固体C_960）六边形GaN（0001）表面上的生长
5. Growth, doping and characterization of GaN and AlGaN deposited on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy for microelectronic applications. [D] . Bremser, Michael D. 1997

机译：微金属应用中通过金属有机气相外延生长在6H-SiC（0001）衬底上的GaN和AlGaN的生长，掺杂和表征。
6. Modeling the Non-Equilibrium Process of the Chemical Adsorption of Ammonia on GaN(0001) Reconstructed Surfaces Based on Steepest-Entropy-Ascent Quantum Thermodynamics [O] . Akira Kusaba, Guanchen Li, Michael R. von Spakovsky, 2017

机译：基于最陡熵上升量子热力学模拟氨在GaN（0001）重构表面上化学吸附的非平衡过程
7. Highly c-axis oriented growth of GaN film on sapphire (0001) by laser molecular beam epitaxy using HVPE grown GaN bulk target [O] . S. S. Kushvaha, M. Senthil Kumar, K. K. Maurya, 2013

机译：使用HVpE生长的GaN体靶通过激光分子束外延在钴蓝（0001）上高度c轴取向生长GaN膜

Oriented growth of diamond on (0001) surface of hexagonal GaN

摘要

著录项

相似文献

相关主题

期刊订阅