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首页> 外文期刊>Journal of Applied Polymer Science >A new environmentally stable protective group for deep UV resists: Methoxy(tetrahydropyranyl) ether
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A new environmentally stable protective group for deep UV resists: Methoxy(tetrahydropyranyl) ether

机译：一种新型的对环境具有深层保护作用的对环境稳定的保护基：甲氧基（四氢吡喃基）醚

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Deep UV photoresists are designed to be used in the manufacturing of highly integrated chips (>16 Mbit). They differ from the conventional photoresists in their principal chemistry. The vast majority of positive deep UV resists are based on protected poly(hydroxystyrene) resins and photochemical acid generators (PAG). They rely on photochemically induced acid-catalyzed reactions (chemical amplification) to generate the desired pattern and meet the high-sensitivity requirements. It turned out that the type of the acid labile protective group is of paramount importance for the performance of the resists. It has to be stable enough not to be cleaved by the weakly acidic phenol at room temperature, but has to be labile enough to be cleaved readily even at the top of the resist where portions of the generated acid may be neutralized by airborne bases. Selection criteria for useful groups and the performance of the very well suited protective group methoxy(tetrahydropyran) are described in this paper. (C) 2000 John Wiley & Sons, Inc. [References: 21]
机译：深紫外光致抗蚀剂设计用于制造高度集成的芯片（> 16 Mbit）。它们的主要化学性质与常规光刻胶不同。绝大多数正性深紫外线抗蚀剂都基于受保护的聚（羟基苯乙烯）树脂和光化学产酸剂（PAG）。它们依靠光化学诱导的酸催化反应（化学扩增）来生成所需的图案并满足高灵敏度要求。结果表明，酸不稳定的保护基的类型对于抗蚀剂的性能至关重要。它必须足够稳定，不能在室温下被弱酸性苯酚裂解，但必须足够不稳定，即使在抗蚀剂的顶部也很容易裂解，在这里抗蚀剂的顶部可能会被空气中的碱中和。本文描述了有用基团的选择标准和非常适合的保护基甲氧基四氢吡喃的性能。 （C）2000 John Wiley＆Sons，Inc. [参考：21]

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