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Pulsed Plasma Deposition from 1,1,2,2-Tetrafluoroethane Electron Cyclotron Resonance and Conventional Plasma Enhanced Chemical Vapor Deposition

机译:1,1,2,2-四氟乙烷电子回旋共振的脉冲等离子体沉积和常规等离子体增强化学气相沉积

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摘要

Pulsed electron cyclotron resonance (ECR) plasmas from 1,1,2,2-C_2H_2F_4 are used to deposit fluorocarbon films. The deposited films have a F : C ratio of 1, with only slight variations in % CF x as the deposition pressure is decreased. The optical emission (OES) spectra of the pulsed C_2H_2F_4 plasmas show high intensity peaks for H, C_2, and C_3, with lower intensity CF_2 and F peaks. The dominant OES peak shifts from H" to C_2 when the pressure is reduced, most likely a result of the increased electron temperature at the lower pressure. Gas-phase recombination reactions may be occur- ring between the OES sampling region and the deposition substrate ( -S-in. distance), producing fluorocarbon molecular deposition species, thus accounting for the high degree of fluorination in the deposited films. Parallel plate plasma deposited films from C _2H_2F_4 show less fluorination than their ECR counte~arts, as well as vastly different OES spectra, with CF_2 peaks dominating the spectra versus Hand C_2. The presence of ion bombardment in the parallel plate system tends to defluorinate the depositing films, and thus can account for the less fluorinated films deposited in the parallel plate versus ECR systems.
机译:来自1,1,2,2-C_2H_2F_4的脉冲电子回旋共振(ECR)等离子体用于沉积碳氟化合物薄膜。沉积的薄膜的F:C比为1,随着沉积压力的降低,%CF x的变化很小。脉冲C_2H_2F_4等离子体的光发射(OES)光谱显示出H,C_2和C_3的高强度峰,而CF_2和F峰的强度较低。减压时,主要的OES峰从H“移到C_2,这很可能是在较低压力下电子温度升高的结果。在OES采样区域和沉积衬底之间可能发生气相重组反应( -S-in。距离),产生碳氟化合物分子沉积物,从而说明了沉积膜中的氟化程度高。C_2H_2F_4平行板等离子体沉积膜的氟化程度低于其ECR技术,并且差异很大。 OES光谱中,CF_2峰相对于Hand C_2占主导地位,平行板系统中离子轰击的存在往往会使沉积膜脱氟,因此可以解释平行板与ECR系统中沉积的氟化膜较少。

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