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首页> 外文期刊>Journal of Applied Polymer Science >Preparation and Characterization of Photoreactive Copolymers Containing Curable Pendants for Positive Photoresist
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Preparation and Characterization of Photoreactive Copolymers Containing Curable Pendants for Positive Photoresist

机译：含正性光刻胶固化剂的光反应性共聚物的制备与表征

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tert-Butyl methacrylate (TBMA) was copolymerized with various comono- mers that were selected from methyl methacrylate (MMA), n-butyl acrylate (NBA), acrylic acid (AA), and 2-hydroxyethyl methacrylate (HEMA). From film physical prop- erties, poly(TBMA-co-HEMA) and poly(TBMA-co-AA-co-NBA), were selected as resin binders. To introduce unsaturated double bonds onto the side chain of copolymers, they were further functionalized with acryloyl chloride and glycidyl methacrylate. Copoly- mers synthesized in this investigation were all identified by using FTIR and NMR. The thermal decomposition temperature of functionalized poly(TBMA-co-HEMA) showed obvious difference before and after crosslinking. Adding a small amount of EGDMA as the crosslinking agent could increase the degree of crosslinking and obviously improve the physical properties. Functionalized poly(TBMA-co-HEMA) was used as a binder re~in and composed with a photoacid generator for positive photoresists. From exposure characteristics, the optimal lithographic condition was achieved when exposed for 90 s, PEB at loo°C for 2.5 min, and developed in 10 wt % Na2CO3 developer for 30 s. After completing the lithography process, the residual pattern of positive photoresist was further treated at 140°C for 30 min to cure the pendant unsaturated groups. The resolution of the positive photoresist was analyzed by an optical microscope and SEM technique.
机译：将甲基丙烯酸叔丁酯（TBMA）与选自甲基丙烯酸甲酯（MMA），丙烯酸正丁酯（NBA），丙烯酸（AA）和甲基丙烯酸2-羟乙酯（HEMA）的各种共聚单体共聚。从薄膜的物理特性中，选择了聚（TBMA-co-HEMA）和聚（TBMA-co-AA-co-NBA）作为树脂粘合剂。为了将不饱和双键引入共聚物的侧链，将它们进一步用丙烯酰氯和甲基丙烯酸缩水甘油酯官能化。本研究中合成的共聚体全部通过FTIR和NMR鉴定。官能化聚（TBMA-co-HEMA）的热分解温度在交联前后有明显差异。加入少量的EGDMA作为交联剂可以增加交联度，明显改善物理性能。官能化的聚（TBMA-co-HEMA）用作粘合剂，并与用于正性光刻胶的光致产酸剂组成。从曝光特性来看，当曝光90 s，在低温下将PEB曝光2.5分钟并在10 wt％Na2CO3显影剂中显影30 s时，可获得最佳光刻条件。完成光刻工艺后，将正性光刻胶的残留图案在140°C下进一步处理30分钟，以固化悬垂的不饱和基团。通过光学显微镜和SEM技术分析正性光刻胶的分辨率。

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