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首页> 外文期刊>Journal of Applied Polymer Science >Synthesis and characterization of novel copolymers with the trimethylsilyl group for deep-UV photoresists
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Synthesis and characterization of novel copolymers with the trimethylsilyl group for deep-UV photoresists

机译：用于深紫外光致抗蚀剂的具有三甲基甲硅烷基的新型共聚物的合成与表征

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摘要

N-(4-Acetoxyphenyl) maleimide (APMI) and three kinds of comonomers bearing a trimethylsilyl group were copolymerized at 60degreesC in the presence of azobisisobutyronitrile (AIBN) as an initiator in 1,4-dioxane to obtain the three IP, IIP, and IIIP copolymers. These copolymers were removed from the acetoxy group in a transesterification process into new IVP, VP, and VIP copolymers with a pendant hydroxyl group. Two modified processes were adopted to prepare photoresists using these copolymers. The first process involved mixing the dissolution inhibitor, o-nitrobenzyl cholate, with the new copolymers. Second, o-nitrobenzyl cholate was introduced into the copolymers using 1,8-diazabicyclo[5.4.0]undec-7-ene (DBU) in dimethylformamide (DMF). The cyclic maleimide structure is responsible for the high thermal stability of these copolymers. After irradiation using deep-UV light and development with aqueous Na2CO3 (0.01 wt %), the developed patterns showed positive images and exhibited good adhesion to the silicon wafer without using any adhesion promoter. The resolution of these resists was at least 0.8 mum and an oxygen-plasma etching rate was 1/5.3 to that of hard-baked HPR-204. (C) 2002 John Wiley Sons, Inc. [References: 25]
机译：N-（4-乙酰氧基苯基）马来酰亚胺（APMI）和三种带有三甲基甲硅烷基的共聚单体在作为引发剂的偶氮二异丁腈（AIBN）存在下于60°C下于1,4-二恶烷中共聚得到三种IP，IIP和IIIP共聚物。在酯交换过程中将这些共聚物从乙酰氧基中除去，转变为带有侧链羟基的新IVP，VP和VIP共聚物。采用了两种改进的方法来制备使用这些共聚物的光致抗蚀剂。第一个过程涉及将溶解抑制剂邻硝基苄基胆酸盐与新共聚物混合。其次，使用在二甲基甲酰胺（DMF）中的1,8-二氮杂双环[5.4.0]十一碳-7-烯（DBU）将邻硝基苄基胆酸酯引入共聚物中。环状马来酰亚胺结构负责这些共聚物的高热稳定性。在使用深紫外光照射并用Na 2 CO 3水溶液（0.01wt％）显影后，所显影的图案显示出正像并且在不使用任何粘合促进剂的情况下显示出对硅晶片的良好粘合。这些抗蚀剂的分辨率至少为0.8μm，并且氧等离子体蚀刻速率为硬烘烤的HPR-204的1 / 5.3。 （C）2002 John Wiley Sons，Inc. [参考：25]

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