ELECTRICAL PROPERTIES OF METAL (INDIUM)/POLYANILINE SCHOTTKY DEVICES

Pandey SS.; Srivastava VK.; Malhotra BD.; Ram MK.

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ELECTRICAL PROPERTIES OF METAL (INDIUM)/POLYANILINE SCHOTTKY DEVICES

机译：金属（铟）/聚对苯二甲酸肖特基器件的电学性质

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Schottky devices were fabricated by thermal evaporation of indium on chemically synthesized polyaniline, poly(o-anisidine), and poly( aniline-co-ortho-anisidine) co-polymer. Electrical characterization of each of these devices was carried out using current (I)-voltage (V) and capacitance (C)-voltage (V) measurements. The value of various junction parameters such as rectification ratio, ideality factor, and barrier heights of an In/poly (aniline-co-o-anisidine) Shootky device were found to be 300, 4.41, and .4972 V compared to the values of 60, 5.5, and 0.5101 V obtain for an In/polyaniline device, respectively. (C) 1997 John Wiley & Sons, Inc. [References: 21]

机译：肖特基器件是通过在化学合成的聚苯胺，聚（邻茴香胺）和聚（苯胺-邻-邻氨基苯胺）共聚物上热蒸发铟制得的。使用电流（I）-电压（V）和电容（C）-电压（V）测量对这些设备中的每一个进行电气表征。发现In / poly（苯胺-co-o-茴香胺）Shooky器件的各种结参数（例如整流比，理想因子和势垒高度）的值分别为300、4.41和.4972V。 In /聚苯胺器件分别获得60、5.5和0.5101 V的电压。（C）1997 John Wiley＆Sons，Inc. [参考：21]

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《Journal of Applied Polymer Science》 |1997年第13期|共4页
作者
Pandey SS.; Srivastava VK.; Malhotra BD.; Ram MK.;
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正文语种 eng
中图分类高分子化学（高聚物）;高分子化合物产品;有机化学;
关键词
Polyaniline; Polyacetylene;

机译：聚苯胺;聚乙炔;

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专利

1. ELECTRICAL PROPERTIES OF METAL (INDIUM)/POLYANILINE SCHOTTKY DEVICES [J] . Pandey SS., Srivastava VK., Malhotra BD., Journal of Applied Polymer Science . 1997,第13期

机译：金属（铟）/聚对苯二甲酸肖特基器件的电学性质
2. Electrical and optical properties of an organic semiconductor based on polyaniline prepared by emulsion polymerization and fabrication of Ag/polyaniline-Si Schottky diode [J] . Yakuphanoglu F, Basaran E, Senkal BF, The journal of physical chemistry, B. Condensed matter, materials, surfaces, interfaces & biophysical . 2006,第34期

机译：乳液聚合制备Ag /聚苯胺/ n-Si肖特基二极管制备的基于聚苯胺的有机半导体的电学和光学性质
3. Electrical and interface state density properties of polyaniline-poly-3-methyl thiophene blend/p-Si Schottky barrier diode [J] . Sava§ S6nmezoglu, Sevilay Senkul, Recep Ta§ Solid state sciences . 2010,第5期

机译：聚苯胺-聚-3-甲基噻吩共混物/ p-Si肖特基势垒二极管的电和界面态密度特性
4. Electrical and Optical Properties of Indium-Modified SeSbTe Thin Films for Low Power Memory Devices [C] . H. Ghamlouche, S. T. Mahmoud, N. Qamhieh, Mediterranean Conference on Innovative Materials and Applications . 2011

机译：用于低功率存储器件的铟改性SESBTE薄膜的电气和光学性能
5. Metal organic vapor phase epitaxy growth and electrical characterization of high-resistivity and lattice-mismatched indium-arsenic-phosphorus and aluminum-indium-arsenic-phosphorus buffer layers for indium arsenide and indium phosphide device application. [D] . Bui, Steven Sontung. 2008

机译：用于砷化铟和磷化铟器件的高电阻率和晶格失配的铟砷磷和铝铟砷磷缓冲层的金属有机气相外延生长和电学表征。
6. Frequency and gate voltage effects on the dielectric properties and electrical conductivity of Al∕SiO2∕p-Si metal-insulator-semiconductor Schottky diodes [O] . D. E. Yıldız, İ. Dökme -1

机译：频率和栅极电压对Al ∕ SiO2 ∕ p-Si金属-绝缘体-半导体肖特基二极管的介电性能和电导率的影响
7. Electrical properties of polyaniline/indium tin oxide nanocomposites. [O] . HERCULANO G. E., RIBEIRO C., BIANCHI R. F. 2008

机译：聚苯胺/氧化铟锡纳米复合材料的电性能。

ELECTRICAL PROPERTIES OF METAL (INDIUM)/POLYANILINE SCHOTTKY DEVICES

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