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首页> 外文期刊>Journal of Applied Polymer Science >Surface Morphology of PECVD Fluorocarbon Thin Films from Hexafluoropropylene Oxide,1,1,2,2-Tetrafluoroethane,and Difluoromethane
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Surface Morphology of PECVD Fluorocarbon Thin Films from Hexafluoropropylene Oxide,1,1,2,2-Tetrafluoroethane,and Difluoromethane

机译：六氟环氧丙烷，1,1,2,2-四氟乙烷和二氟甲烷的PECVD氟碳薄膜的表面形态

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摘要

Atomic force microscopy (AFM) measurements have been made on a series of fluorocarbon films deposited from pulsed phasmas of hexafluoropropylene oxide (HFPO),1,1,2,2-tetrafluoroethane (C_2H_2F_4),and difluoromethane (CH_2F_2).All of the films give images showing nodular growth (cauliflower-like appearance),with the size and distribution of the nodules dependent on both the precursor,the degree of surface modification to which the growing film is exposed,and the substrate surface.Films deposited from C_2H_2F_4 showed clusters of smaller nodules around larger nodules,whereas films deposited from CH_2F_2 were characterized by a uniform distribution of smaller nodules,and films deposited from HFPO had the largest observed nodules.Movchan and Demchishin's structure zone model was applied to the observed films,which were all found to be zone 1 structures,indicating that film growth is dominated by shadowing effects.Increased substrate temperature and incident power per nm of film deposited results in deceased rms roughness,consistent with greater atomic mobility during depositon.Larger nodules in the fluorocarbon films developed on silicon wafer substrates than on rougher Al-coated substrates.Advancing contact angles for all of the films were found to be higher than that of PTEE (108 deg),indicating both hydrophobic and rough surfaces.Specifically,contact angles of films deposited from HFPO were found to increase with pulse off-time, the same trend observed for both the CF_2 fraction of the film and the rms roughness.
机译：已对六氟环氧丙烷（HFPO），1,1,2,2-四氟乙烷（C_2H_2F_4）和二氟甲烷（CH_2F_2）的脉冲相位沉积的一系列碳氟化合物膜进行了原子力显微镜（AFM）测量。给出显示结节状生长的图像（花椰菜样外观），结节的大小和分布取决于前体，生长膜所暴露的表面改性程度和基材表面。从C_2H_2F_4沉积的膜显示出簇较大的结节周围有较小的结节，而从CH_2F_2沉积的膜的特征是较小的结节均匀分布，并且从HFPO沉积的膜具有最大的观察到的结节。将Movchan和Demchishin的结构区模型应用于观察到的膜成为区域1结构，表明膜的生长主要受阴影效应的影响。衬底温度的升高和每nm沉积膜的入射功率的增加r结果导致均方根粗糙度降低，并与沉积过程中更大的原子迁移率相吻合。硅晶片基板上形成的碳氟化合物薄膜中的结节比粗糙的铝涂层基板上的结节更大。所有薄膜的前进接触角均高于PTEE。 （108度），表明疏水性表面和粗糙表面。具体而言，发现从HFPO沉积的薄膜的接触角随脉冲关闭时间而增加，对于薄膜的CF_2分数和均方根粗糙度均观察到相同的趋势。

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