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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >In situ preparation of YH_2 thin films by PLD for switchable devices
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In situ preparation of YH_2 thin films by PLD for switchable devices

机译：PLD原位制备YH_2薄膜用于开关器件。

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摘要

We prepared epitaxial YH_2 films on (111) CaF_2 by pulsed laser deposition (PLD) from a metallic yttrium target. Without adding any reactive hydrogen, the dihydride is formed in situ due to the hydrogen evolving from the metallic target which contains approx 7 at percent H. Upon pulsed laser irradiation, the target acts as a pulsed source of both yttrium and hydrogen. The increased hydrogen content of the film as compared to the target is explained to be due to diffusion assisted preferential ablation of hydrogen. Due to this deposition process the hydrogen load on the deposition system is minimized, which is important in view of the fabrication of hydride/oxide stacks for all-solid-state switchable mirror devices. Furthermore, the preparation of both nanocrystalline and epitaxial YH_2 films shows the versatility of the PLD process.
机译：我们通过脉冲激光沉积（PLD）从金属钇靶上在（111）CaF_2上制备了外延YH_2膜。在不添加任何活性氢的情况下，由于氢是从金属靶中逸出的，所以原位形成了二氢，金属靶中的氢含量约为7at％。在脉冲激光照射下，该靶既是钇又是氢的脉冲源。与靶相比，膜中氢含量增加的原因是由于扩散辅助的氢优先烧蚀。由于该沉积过程，使得沉积系统上的氢负载最小化，鉴于制造用于全固态可切换反射镜装置的氢化物/氧化物堆叠，这是重要的。此外，纳米晶体和外延YH_2薄膜的制备都显示了PLD工艺的多功能性。

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