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Optical nanospectroscopy study of ion-implanted silicon and biological growth medium

机译:离子注入硅和生物生长介质的光学纳米光谱研究

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摘要

The advent of scanning near-field optical microscopy (SNOM) has augmented at the microscopic level the usefulness of IR spectroscopy. Two-dimensional imaging of chemical constituents makes this a very attractive and powerful new approach. In this paper we present SNOM results on boron-doped silicon and on biological growth medium by means of shear-force, reflectivity and photocurrent measurements. Such experiments allowed us to identify boron clusters embedded in silicon and the distribution of growth medium constituents with a lateral resolution well below the diffraction limit.
机译:扫描近场光学显微镜(SNOM)的出现在微观上增强了红外光谱的实用性。化学成分的二维成像使其成为一种非常有吸引力且功能强大的新方法。在本文中,我们通过剪切力,反射率和光电流测量,对掺硼硅和生物生长介质上的SNOM结果进行了介绍。这样的实验使我们能够确定嵌入硅中的硼簇以及横向分辨率远低于衍射极限的生长介质成分的分布。

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