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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Mechanisms of conductivity conversion in extrinsically intrinsically doped p-HgCdTe solid solutions under low energy ion beam milling
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Mechanisms of conductivity conversion in extrinsically intrinsically doped p-HgCdTe solid solutions under low energy ion beam milling

机译：低能离子束研磨中非本征掺杂的p-HgCdTe固溶体中电导率转换的机理

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摘要

This study focuses on establishing the mechanisms of ion beam milling (IBM) inducing p-to-n conversion in p-Hg_(1-x)Cd_xTe. The type conductivity conversion in Cu doped p-Hg_(1-x)Cd_xTe was observed experimentally for the first time. It is demonstrated that the main peculiarities of the type conductivity conversion in both extrinsically (As, Sb or Cu) and intrinsically (Hg vacancy) doped p-Hg_(1-x)Cd_xTe are explained on the basis of the model of superfast Hg interstitials diffusion from the mercury diffusion source with very high interstitials concentration. However, the donors are formed in acceptor-specific manner. Particularly, in Cu doped p-Hg_(1-x)Cd_xTe conductivity change occurs because the diffusing Hg interstitials kick-out Cu atoms from the cation sublattice, creating Cu interstitials which acts as donors. Influence of the internal electric field on conversion processes is considered.
机译：这项研究的重点是建立离子束铣削（IBM）诱导p-Hg_（1-x）Cd_xTe中p-n转换的机制。首次实验观察到Cu掺杂的p-Hg_（1-x）Cd_xTe中的类型电导率转换。结果表明，在超快汞气隙模型的基础上，解释了外在（砷，锑或铜）和内在（汞空位）掺杂的p-Hg_（1-x）Cd_xTe两种类型电导率转换的主要特点。汞扩散源中的间隙浓度很高。但是，供体是以受体特异性的方式形成的。特别地，在Cu掺杂的p-Hg_（1-x）Cd_xTe中发生电导率变化，这是因为扩散的Hg间隙从阳离子亚晶格中踢出了Cu原子，从而产生了用作供体的Cu间隙。考虑内部电场对转化过程的影响。

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