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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Uniform optimal plane charge order in superconducting cuprates
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Uniform optimal plane charge order in superconducting cuprates

机译：超导铜酸盐中均匀的最佳平面电荷阶数

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摘要

For simple overoxidized cuprates it was found that T_c scale universally with stoichiometric O~- holes (h) per total O (cluster size or hole density). Moreover, their T_C often optimize at a doping limit of formal plane Cu oxidation of 2.5+, corresponding formally to a uniform alternate hole charge order, denoted P2. In cases of complex selfdopings the stoichiometric holes are not known a priori. However, assuming that optimal T_c will generally correspond to a uniform charge order, their values should be predictable on the O~- hole cluster model. Here we successfully apply this formalism to optimized complex cuprates that are based on M=Hg, Tl, Bi. In a rule of perplexing simplicity, satisfactory agreement with experiment is again obtained on the assumption of a uniform selfdoping to P2. The respective doping levels are reached through a combination of overoxidation and selfdoping (reductions of M). This selfdoping is driven by lattice tension adjustment. The rare exceptional cases, where observed T_c are unusually high, can help in devising strategies for how to further increase T_c. These remarkable empirical rules point to an understanding that superconductivity reflects a charge order related phenomenon and can be manipulated by lattice pressure.
机译：对于简单的过氧化铜酸盐，发现T_c通常随总O的化学计量O-孔（h）缩放（簇尺寸或孔密度）。而且，它们的T_C经常在形式平面Cu氧化的掺杂极限为2.5+时最优化，形式上对应于均匀的交替空穴电荷顺序，表示为P2。在复杂的自掺杂的情况下，先验化学计量孔是未知的。但是，假设最佳T_c通常对应于统一的充电顺序，则它们的值在O型孔簇模型中应该是可预测的。在这里，我们成功地将这种形式主义应用于基于M = Hg，Tl，Bi的优化复杂铜价。在令人困惑的简单规则下，在对P2进行均匀自掺杂的假设下，再次获得了与实验的令人满意的一致性。通过过氧化和自掺杂（M的减少）的组合达到各自的掺杂水平。这种自掺杂是由晶格张力调节驱动的。罕见的例外情况（观察到的T_c异常高）可以帮助设计如何进一步提高T_c的策略。这些引人注目的经验规则表明，超导性反映了与电荷序相关的现象，可以通过晶格压力来操纵。

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