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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >The structures prepared by high temperature-pressure treatment of Cz-Si heavily implanted with He~+
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The structures prepared by high temperature-pressure treatment of Cz-Si heavily implanted with He~+

机译：重注入He〜+的Cz-Si的高温高压处理制备的结构

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摘要

Structure of Czochralski grown silicon heavily implanted with He~+ (dose 1 X 10~(17) cm~(-2), energy 150 keV) and processed at up 1400 K under enhanced hydrostatic pressure (HP, up to 1.1 GPa) for up to 10 h was studied by X-ray diffuse scattering and photoluminescence measurements. Enhanced pressure affects the microstructure of Si:He; the type and concentration of defects in Si:He are dependent on processing parameters. In particular, HP affects the creation of dislocations, especially for the treatments at 920-1270 K. The retarded helium out-diffusion under HP is responsible in part for the effects observed. Calculations based on the density functional theory confirm that the formation energy of vacancies in Si is reduced by the presence of He and by enhanced pressure.
机译：Czochralski生长的硅的结构大量注入He〜+（剂量1 X 10〜（17）cm〜（-2），能量150 keV），并在1400 K的高压下（HP，最高1.1 GPa）进行了处理通过X射线扩散散射和光致发光测量研究了长达10小时的时间。压力升高会影响Si：He的微观结构; Si：He中缺陷的类型和浓度取决于工艺参数。特别是，HP影响位错的产生，特别是在920-1270 K的处理中。HP下延迟的氦气向外扩散部分是所观察到的影响的原因。基于密度泛函理论的计算结果证实，由于He的存在和压力的增加，Si中空位的形成能降低了。

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