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Mechanism of void formation in grain interior of ODS alloys

机译:ODS合金晶粒内部空洞形成机理

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摘要

The mechanism of the void formation in the grain interior of ODS alloy PM2000 was investigated by an internal friction technique. A relaxation peak with a relaxation characteristic was observed around 770 deg C, and average activation energy for the relaxation peak is approximately 2.70 +- 0.16 eV, which is consistent with that of self-diffusion in 8-fenite. Internal friction study has substantiated the existence of the interfacial diffusional relaxation of the stress concentrations in the single crystal ODS alloy. The micrographic results indicate that the actual shape for the voids, which co-exist with the oxide particles in the voids, is ellipsoidal. Taking account of the correlation of the interfacial diffusional relaxation with the ellipsoidal shape of voids, it is suggested that the void formation in grain interior is attributed to the relaxation of the stress-concentration gradients introduced by extrusion deformation via interfacial diffusion.
机译:通过内摩擦技术研究了ODS合金PM2000合金内部的空洞形成机理。在770℃附近观察到具有弛豫特性的弛豫峰,并且该弛豫峰的平均活化能约为2.70±0.16eV,这与在8-芬尼特中的自扩散相一致。内部摩擦研究证实了单晶ODS合金中应力集中的界面扩散弛豫的存在。显微照片结果表明,与空隙中的氧化物颗粒共存的空隙的实际形状是椭圆形的。考虑到界面扩散弛豫与孔隙的椭圆形状的相关性,建议晶粒内部的孔隙形成归因于通过界面扩散通过挤压变形引入的应力集中梯度的弛豫。

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