The purpose of our work was to study the anomalous Hall effect in narrow gap ferromagnetic semiconductors. We investigated transport and magnetic properties of IV-VI compounds: Sn_(1-x)Mn_xTe, Sn_(1-x-y)Mn_xEr_yTe and Sn_(1-x-y)Mn_xEu_yTe in high magnetic fields using the very same samples. The simultaneous analysis of the total Hall coefficient and magnetization measurements data enabled us to determine the anomalous Hall coefficient R_S value and its temperature behavior.
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