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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Magneto-conductance through submicron constriction in ferromagnetic (Ga,Mn)As film
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Magneto-conductance through submicron constriction in ferromagnetic (Ga,Mn)As film

机译：铁磁（Ga，Mn）As膜中通过亚微米收缩产生的磁导

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摘要

We fabricated a simple magnetoresistive microdevice formed by a narrow constriction of submicron width in the epitaxial film of a ferromagnetic (Ga,Mn)As semiconductor, and investigated magnetic properties of the film and the low-temperature charge-carrier transport through the constriction. We have revealed sharp jumps of a lowered conductance in a non-constricted sample and jumps of an enhanced conductance in the constricted one, which appeared when the sweeping magnetic field crossed the regions of the coercive field of the film. We argue that the both features result from a contribution of a magnetic domain wall to the conductance. While the spin-orbit interaction can be responsible for the negative contribution of a domain wall to the conductance, presumably the suppression of the weak localization effects by a domain wall located in the constriction results in the positive contribution to the conductance.
机译：我们在铁磁（Ga，Mn）As半导体的外延膜中制造了一个由亚微米宽度的狭窄收缩形成的简单磁阻微器件，并研究了该膜的磁性和通过该收缩进行的低温载流子传输。我们已经揭示了在非收缩样品中电导降低的急剧跳跃和在收缩样品中电导升高的跳跃，这是在扫掠磁场穿过薄膜矫顽场的区域时出现的。我们认为这两个特征都是由于磁畴壁对电导的贡献所致。尽管自旋轨道相互作用可能导致畴壁对电导的负面影响，但推测是通过位于缩颈处的畴壁对弱的局部效应的抑制导致了对电导的正贡献。

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