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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >H- and D distribution in metallic multilayers studied by 3-dimensional atom probe analysis and secondary ion mass spectrometry
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H- and D distribution in metallic multilayers studied by 3-dimensional atom probe analysis and secondary ion mass spectrometry

机译:通过三维原子探针分析和二次离子质谱研究金属多层中的H和D分布

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摘要

Pd/Nb- and Fe/V multilayers were prepared by either ion sputtering or laser ablation. They were deposited on tungsten tips for field ion microscopy using the 3-dimensional atom probe. D was added by doping from the gas phase. In agreement with thermodynamic data D is accumulated in the metal with the more negative heat of solution, i.e. V or Nb. However, SIMS depth profiles of H concentration measured at room temperature show a pronounced enrichment in the top regions of both Nb- and V layers. This is also observed in a deuterium depth profile obtained by the 3d atom probe measured at 60 K despite the moderate removal of atoms by field evaporation which does not give rise to the formation of lattice defects when compared to sputtering. Thus we assume that surface segregation is the reason for H/D accumulation in surface near regions. The effect vanishes if measurements by the atom probe were made at 20 K where the D mobility is too low to allow D transport to the surface during the time of measurements. With the superior depth resolution of the 3d atom probe being less than 0.5 nm we were able to show that at both the V/Fe and the Nb/W interface depletion of deuterium occurs in a range of about 0.5 nm within the Nb- or V layer due to intermixing of adjacent metals.
机译:通过离子溅射或激光烧蚀制备Pd / Nb-和Fe / V多层膜。使用3维原子探针将它们沉积在钨电极上以进行场离子显微镜检查。通过从气相掺杂来添加D。与热力学数据一致,D以更负的溶液热即V或Nb累积在金属中。但是,在室温下测得的H浓度的SIMS深度剖面显示Nb和V层的顶部区域都有明显的富集。在3D原子探针在60 K下测得的氘深度分布中也观察到了这一点,尽管通过场蒸发适度除去了原子,与溅射相比,不会引起晶格缺陷的形成。因此,我们假设表面偏析是表面附近区域H / D积累的原因。如果原子探针的测量是在20 K处进行的,则在D迁移率太低而无法在测量期间将D传输到表面的情况下,该影响消失。通过3d原子探针的出色深度分辨率小于0.5 nm,我们能够证明在V / Fe和Nb / W界面上,氘的耗尽都在Nb-或V范围内约0.5 nm处发生层由于相邻金属的混合。

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