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The nature of the low-temperature minimum of resistivity in ceramic manganites

机译:陶瓷锰矿中低温电阻率最小值的性质

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摘要

Electrical transport measurements were carried out on a ceramic samples of La_(0.5)Pb_(0.5)MnO_3 containing 10 at. percent of Ag in a dispersed and La_(0.8)Sr_(0.2)MnO_3. Their resistivity at zero applied magnetic field exhibits a shallow minimum at the interval of T approx 25-30 K. This mm shifts towards lower T upon applying a magnetic field (H) and disappears at a certain field H_(cr) while residual resistivity decreases notably with increasing of H. It is found that the bulk-scattering model is not adequate for describing of such behavior of #rho# in the presence of H. It seems that the proposed model of charge-carrier tunneling between antiferromagnetically coupled grains accounts for the results obtained in spite of significant difference in the crystallinity (grain size) of the samples.
机译:在La_(0.5)Pb_(0.5)MnO_3包含10 at。的陶瓷样品上进行电迁移测量。分散和La_(0.8)Sr_(0.2)MnO_3中的银的百分含量。它们在零磁场下的电阻率在T约25-30 K的间隔内呈现出一个最小的最小值。当施加磁场(H)时,该mm向较低的T方向偏移,并在一定的磁场H_(cr)处消失,而剩余电阻率降低尤其是随着H的增加。发现存在H时,体散射模型不足以描述#rho#的这种行为。似乎所提出的反铁磁耦合晶粒之间的电荷-载流子隧穿模型解释了尽管样品的结晶度(晶粒尺寸)存在显着差异,但仍获得了结果。

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