...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Electronic Materials >Tuning Between Quantum-Dot- and Quantum-Well-Like Behaviors in Type II ZnTe Submonolayer Quantum Dots by Controlling Tellurium Flux During MBE Growth
【24h】

Tuning Between Quantum-Dot- and Quantum-Well-Like Behaviors in Type II ZnTe Submonolayer Quantum Dots by Controlling Tellurium Flux During MBE Growth

机译：在MBE生长过程中通过控制碲通量来调节II型ZnTe亚单层量子点中的量子点和量子阱相似行为

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We report tuning of properties of type II nanostructures between quantum dot (QD)-like and quantum well (QW)-like behaviors in ZnSe layers with ZnTe submonolayer insertions, grown by migration-enhanced epitaxy. The sizes of QDs are estimated from magneto-photoluminescence (PL) measurements, which showed no significant change in the QD lateral size with increasing Te flux, indicating increase in QD density instead. The area density of QDs is estimated from the results of secondary-ion mass spectrometry measurements. It is determined that, in the sample grown using the highest Te flux, the electronic wavefunctions begin to overlap, leading to QW-like behavior before the formation of a full QW layer. This is also confirmed via temperature-dependent time-resolved PL, which showed significant change of excitonic lifetimes and binding energies of type II excitons.
机译：我们报道了通过迁移增强的外延生长的具有ZnTe亚单层插入的ZnSe层中的量子点（QD）类和量子阱（QW）类行为之间的类型II纳米结构的性能调整。 QD的尺寸是根据磁光致发光（PL）测量估算的，该测量结果表明，随着Te通量的增加，QD横向尺寸没有明显变化，反而表明QD密度增加了。 QD的面积密度是根据二次离子质谱测量的结果估算的。已确定，在使用最高Te通量生长的样品中，电子波函数开始重叠，从而导致在形成完整QW层之前出现类似QW的行为。这也通过与温度有关的时间分辨的PL证实，它显示了激子寿命和II型激子的结合能的显着变化。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号