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首页> 外文期刊>Journal of Electronic Materials >Preparation and Thermoelectric Properties of Doped Bi_2Te_3-Bi_2Se_3 Solid Solutions
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Preparation and Thermoelectric Properties of Doped Bi_2Te_3-Bi_2Se_3 Solid Solutions

机译:掺杂Bi_2Te_3-Bi_2Se_3固溶体的制备及热电性能

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摘要

Since Bi_2Te_3 and Bi_2Se_3 have the same crystal structure, they form a homogeneous solid solution. Therefore, the thermal conductivity of the solid solution can be reduced by phonon scattering. The thermoelectric figure of merit can be improved by controlling the carrier concentration through doping. In this study, Bi_2Te_(2.85)Se_(0.15):D_m (D: dopants such as I, Cu, Ag, Ni, Zn) solid solutions were prepared by encapsulated melting and hot pressing. All specimens exhibited n-type conduction in the measured temperature range (323 K to 523 K), and their electrical conductivities decreased slightly with increasing temperature. The undoped solid solution showed a carrier concentration of 7.37 × 10~(19) cm~(-3), power factor of 2.1 mW m~(-1) K~(-1), and figure of merit of 0.56 at 323 K. The figure of merit (ZT) was improved due to the increased power factor by I, Cu, and Ag dopings, and maximum ZT values were obtained as 0.76 at 323 K for Bi_2Te_(2.85)Se_(0.15):Cu_(0.01) and 0.90 at 423 K for Bi_2Te_(2.85)-Se_(0.15):I_(0.005). However, the thermoelectric properties of Ni- and Zn-doped solid solutions were not enhanced.
机译:由于Bi_2Te_3和Bi_2Se_3具有相同的晶体结构,因此它们形成均匀的固溶体。因此,可以通过声子散射来降低固溶体的热导率。通过掺杂控制载流子浓度,可以改善热电性能。在这项研究中,Bi_2Te_(2.85)Se_(0.15):D_m(D:诸如I,Cu,Ag,Ni,Zn等掺杂剂)的固溶体通过封装熔融和热压制备。所有样品在测得的温度范围(323 K至523 K)中均表现出n型导电性,其电导率随温度升高而略有下降。未掺杂的固溶体的载流子浓度为7.37×10〜(19)cm〜(-3),功率因数为2.1 mW m〜(-1)K〜(-1),在323 K时的品质因数为0.56。 。由于I,Cu和Ag掺杂提高了功率因数,因此改善了品质因数(ZT),对于Bi_2Te_(2.85)Se_(0.15):Cu_(0.01),在323 K下获得的最大ZT值为0.76。对于Bi_2Te_(2.85)-Se_(0.15):I_(0.005)在423 K时为0.90。但是,Ni和Zn掺杂固溶体的热电性能并未提高。

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