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首页> 外文期刊>Journal of Electronic Materials >Comparative Study on MOCVD Growth of a-Plane GaN Films on r-Plane Sapphire Substrates Using GaN, AlGaN, and AlN Buffer Layers
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Comparative Study on MOCVD Growth of a-Plane GaN Films on r-Plane Sapphire Substrates Using GaN, AlGaN, and AlN Buffer Layers

机译：使用GaN，AlGaN和AlN缓冲层在r面蓝宝石衬底上进行a面GaN膜的MOCVD生长的比较研究

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摘要

In this work, we have comparatively investigated the effects of the GaN, AlGaN, and AlN low-temperature buffer layers (BL) on the crystal quality of a-plane GaN thin films grown on r-plane sapphire substrates. Scanning electron microscopy images of the a-plane GaN epilayers show that using an AlGaN BL can significantly reduce the density of surface pits. The full-width at half-maximum values of the (1120) x-ray rocking curve (XRC) are 0.19 deg, 0.36 deg, and 0.48 deg for the films grown using Al_(0.15)Ga_(0.85)N, GaN, and AlN BLs, respectively, indicating that an AlGaN BL can effectively reduce the mosaicity of the films. Room-temperature photoluminescence shows that the AlGaN BL results in lower impurity incorporation in the subsequent a-plane GaN films, as compared with the case of GaN and AlN BLs. The higher crystal quality of a-plane GaN films produced by the Al_(0.15)Ga_(0.85)N BL could be due to improvement of BL quality by reducing the lattice mismatch between the BL and r-sapphire substrates, while still keeping the lattice mismatch between the BL and epitaxial a-plane GaN films relatively small.
机译：在这项工作中，我们比较研究了GaN，AlGaN和AlN低温缓冲层（BL）对在r面蓝宝石衬底上生长的a面GaN薄膜的晶体质量的影响。 a面GaN外延层的扫描电子显微镜图像显示，使用AlGaN BL可以显着降低表面凹坑的密度。对于使用Al_（0.15）Ga_（0.85）N，GaN和GaN生长的薄膜，（1120）X射线摇摆曲线（XRC）的半峰全宽分别为0.19度，0.36度和0.48度。 AlN BL分别表示AlGaN BL可以有效降低薄膜的镶嵌性。与GaN和AlN BL的情况相比，室温光致发光显示Al​​GaN BL导致在随后的a面GaN膜中的杂质掺入较低。由Al_（0.15）Ga_（0.85）N BL生产的a面GaN膜的较高晶体质量可能是由于通过降低BL和r蓝宝石衬底之间的晶格失配而提高了BL质量，同时仍保持晶格BL和外延a面GaN膜之间的失配相对较小。

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