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首页> 外文期刊>Journal of Experimental and Theoretical Physics >Charge transport in dielectrics by tunneling between traps
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Charge transport in dielectrics by tunneling between traps

机译：通过陷阱之间的隧穿在电介质中进行电荷传输

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摘要

The theory of charge transport in dielectrics by tunneling between traps is developed. In contrast to the Frenkel model, traps in silicon nitride are characterized by two energies, optical and thermal ones, and ionization occurs by the multiphonon mechanism. The theory predicts that tunneling between such traps is thermally stimulated: the half-difference of the optical and thermal energies plays the role of the activation energy. This theory successfully explains the experimental current-voltage characteristics of silicon-enriched silicon nitride. Such silicon nitride contains a large number of traps whose nature is associated with excess silicon. Charge transport in this material occurs by tunneling between adjacent traps.
机译：提出了通过陷阱之间的隧穿在电介质中进行电荷传输的理论。与Frenkel模型相反，氮化硅中的陷阱的特征在于两种能量，即光能和热能，并且通过多声子机理发生电离。该理论预测，这种陷阱之间的隧穿会受到热刺激：光能和热能的半差起活化能的作用。该理论成功地解释了富硅氮化硅的实验电流-电压特性。这种氮化硅包含大量的陷阱，其性质与过量的硅有关。这种材料中的电荷传输通过相邻陷阱之间的隧穿发生。

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