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首页> 外文期刊>Journal of Experimental and Theoretical Physics >Dynamics of Charge Carriers at the Place of the Formation of a Muonic Atom in Diamond and Silicon
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Dynamics of Charge Carriers at the Place of the Formation of a Muonic Atom in Diamond and Silicon

机译：金刚石和硅中的Muonic原子形成处的载流子动力学

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摘要

The space-time distribution of charge carriers at the place of the location of a muonic atom formed when a negative muon is captured by an atom of the lattice has been numerically simulated taking into account the self-consistent electric field. The results of μSR experiments with negative muons in diamond crystals have been explained and reasons for the difference in the behavior of the spin polarization of the negative muon in boron-doped diamond and in silicon have been revealed. The condition of the validity of the analytical solution of this problem has been obtained. It has been shown that the muonic atom in diamond, in contrast to silicon, does not form a neutral acceptor center in the paramagnetic state during the muon experiment and remains in the diamagnetic state of a positive ion.
机译：考虑到自洽电场，已经在数值上模拟了当载流子的负离子被晶格的原子捕获时所形成的离子原子的位置处的载流子的时空分布。解释了在金刚石晶体中用负μ子进行μSR实验的结果，并揭示了掺硼金刚石和硅中负μ子的自旋极化行为不同的原因。已经获得了该问题的解析解的有效性条件。已经表明，与硅相反，金刚石中的μ原子在μ子实验期间不会以顺磁态形成中性受体中心，而是保持为正离子的抗磁态。

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