Nonlinear-optical and structural properties of nanocrystalline silicon carbide films

Brodyn M.S.; Volkov V.I.; Lyakhovetskii V.R.; Rudenko V.I.; Puzilkov V.M.; Semenov A.V.

首页> 外文期刊>Journal of Experimental and Theoretical Physics >Nonlinear-optical and structural properties of nanocrystalline silicon carbide films

【24h】

Nonlinear-optical and structural properties of nanocrystalline silicon carbide films

机译：纳米晶碳化硅薄膜的非线性光学和结构性质

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

The aim of this study is to investigate the nonlinearity of refraction in nanostructured silicon carbide films depending on their structural features (synthesis conditions for such films, substrate temperature during their deposition, concentration of the crystalline phase in the film, Si/C ratio of atomic concentrations in the film, and size of SiC nanocrystals formed in the film). The corresponding dependences are obtained, as well as the values of nonlinear-optical third-order susceptibility χ~((3))(ω ω -ω ω) for various silicon polytypes (3C, 21R, and 27R) which exceed the value of χ~((3)) in bulk silicon carbide single crystals by four orders of magnitude.

机译：这项研究的目的是研究纳米结构碳化硅膜的折射非线性，具体取决于其结构特征（此类膜的合成条件，沉积过程中的衬底温度，膜中晶相的浓度，原子的Si / C比）膜中的浓度，以及在膜中形成的SiC纳米晶体的尺寸）。获得了相应的依存关系，以及各种硅多型体（3C，21R和27R）的非线性光学三阶磁化率χ〜（（3））（ωω-ωω）的值超过了块状碳化硅单晶中的χ〜（（3））为四个数量级。

著录项

来源
《Journal of Experimental and Theoretical Physics》 |2012年第2期|共7页
作者
Brodyn M.S.; Volkov V.I.; Lyakhovetskii V.R.; Rudenko V.I.; Puzilkov V.M.; Semenov A.V.;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类理论物理学;
关键词
Nonlinear-optical; structural properties; refraction;

机译：非线性光学;结构特性;折射;

相似文献

外文文献
中文文献
专利

1. Nonlinear-optical and structural properties of nanocrystalline silicon carbide films [J] . Brodyn M.S., Volkov V.I., Lyakhovetskii V.R., Journal of Experimental and Theoretical Physics . 2012,第2期

机译：纳米晶碳化硅薄膜的非线性光学和结构性质
2. Growth of Wide-Bandgap Nanocrystalline Silicon Carbide Films by HWCVD: Influence of Filament Temperature on Structural and Optoelectronic Properties [J] . Himanshu S. Jha, Asha Yadav, Mukesh Singh, Journal of Electronic Materials . 2015,第3期

机译：HWCVD法生长宽带隙纳米晶碳化硅薄膜：灯丝温度对结构和光电性能的影响
3. Structural changes in tungsten wire and their effect on the properties of hydrogenated nanocrystalline cubic silicon carbide thin films [J] . Akimori Tabata, Akinori Naito Thin Solid Films . 2011,第14期

机译：钨丝的结构变化及其对氢化纳米晶立方碳化硅薄膜性能的影响
4. Effect of RF Power Density on Micro- and Macro-structural Properties of PECVD Grown Hydrogenated Nanocrystalline Silicon Thin Films [C] . Gozde Kahriman GOKDOGAN, Tamila ANUTGAN Balkan Physical Union., International Conference . 2016

机译：射频功率密度对PECVD生长氢化纳米晶硅薄膜的微观和宏观结构性能的影响
5. Characterization of amorphous silicon carbide and silicon carbonitride thin films synthesized by polymer-source chemical vapor deposition. Mechanical structural and metal-interface properties [D] . Awad, Yousef 2006

机译：通过聚合物源化学气相沉积合成的非晶碳化硅和碳氮化硅薄膜的表征。机械结构和金属界面性能
6. Effect of the Nd content on the structural and photoluminescence properties of silicon-rich silicon dioxide thin films [O] . Olivier Debieu, Julien Cardin, Xavier Portier, 2011

机译：Nd含量对富硅二氧化硅薄膜结构和光致发光性能的影响
7. Spectroscopy and structural properties of amorphous and nanocrystalline silicon carbide thin films [O] . Halindintwali, Sylvain, Knoesen, D., Julies, B.A., 2011

机译：非晶和纳米晶碳化硅薄膜的光谱学和结构性质
8. Influence of Substrate Temperature and Hydrogen Dilution Ratio on the Properties of Nanocrystalline Silicon Thin Films Grown by Hot-Wire Chemical Vapor Deposition [R] . Moutinho, H. R., Jiang, C. S., Nelson, B., 2003

机译：衬底温度和氢稀释比对热线化学气相沉积法生长纳米硅薄膜性能的影响

Nonlinear-optical and structural properties of nanocrystalline silicon carbide films

摘要

著录项

相似文献

相关主题

期刊订阅