首页> 外文期刊>Journal of Experimental and Theoretical Physics >Spin-Dependent Electron Transport in Manganite Bicrystal Junctions
【24h】

Spin-Dependent Electron Transport in Manganite Bicrystal Junctions

机译:锰双晶结中自旋电子的输运

获取原文
获取原文并翻译 | 示例
           

摘要

Magnetic bicrystal films and junctions of magnetic La_(0.67)Sr_(0.33)MnO_3 (LSMO) and La_(0.67)Ca_(0.33)MnO_3 (LCMO) films epitaxially grown on NdGaO_3 substrates with the (110) planes of their two parts misoriented (tilted) at angles of 12°, 22°, 28°, and 38° are investigated. For comparison, bicrystal boundaries with a 90° misorientation of the axes of the NdGaO_3 (110) planes were fabricated. The directions of the axes and the magnetic anisotropy constants of the films on both sides of the boundary are determined by two independent techniques of magnetic resonance spectroscopy. The magnetic misorientation of the axes in the substrate plane has been found to be much smaller than the crystallographic misorientation for tilted bicrystal boundaries, while the crystallographic and magnetic misorientation angles coincide for boundaries with rotation of the axes. An increase in the magnetoresistance and characteristic resistance of bicrystal junctions with increasing misorientation angle was observed experimentally. The magnetoresistance of bicrystal junctions has been calculated by taking into account the uniaxial anisotropy, which has allowed the contributions from the tunneling and anisotropic magnetoresistances to be separated. The largest tunneling magne-toresistance was observed on LCMO bicrystal junctions, in which the characteristic resistance of the boundary is higher than that in LSMO boundaries.
机译:磁性双晶膜和La_(0.67)Sr_(0.33)MnO_3(LSMO)和La_(0.67)Ca_(0.33)MnO_3(LCMO)膜的外延生长在NdGaO_3衬底上的两个部分的(110)平面取向不正确的磁性双结膜(倾斜)以12°,22°,28°和38°的角度进行研究。为了进行比较,制作了NdGaO_3(110)平面的轴具有90°错误取向的双晶边界。边界的两侧的膜的轴方向和膜的磁各向异性常数是通过两种独立的磁共振波谱技术确定的。已经发现,在衬底平面中的轴的磁取向差比倾斜的双晶边界的晶体学取向差小得多,而对于轴的旋转,晶界和磁取向差角对于边界是重合的。实验观察到双晶结的磁阻和特征电阻随取向差角的增加而增加。通过考虑单轴各向异性来计算双晶结的磁阻,这使得隧道效应和各向异性磁阻的贡献得以分离。在LCMO双晶结上观察到最大的隧穿镁电阻,其边界的特征电阻高于LSMO边界。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号