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Transient Processes in Two-Barrier Nanostructures

机译:两势垒纳米结构中的瞬态过程

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摘要

An analytic solution to the problem on transient processes in a two-barrier nanostructure is found. Explicit expressions are obtained for a transient current produced by an instantly applied weak electric field. The current relaxes to a stationary state for a time ?/Γ (Γ is the width of a resonance level), oscillating at a frequency of ξ = ε – ε_R, where ε is the energy of electrons coming from an emitter and ε_R is the resonance level energy. The transient current for interacting electrons is found in the quasi-classical approximation. It is shown that interaction between electrons can drastically change the transient current, especially in the presence of hysteresis of the current–voltage characteristic (CVC). Near extreme CVC values in the region of negative differential conductivity, the oscillation frequency tends to zero and becomes imaginary, compensat- ing the decay. Thus, the transient current relaxes with very large times without oscillations. In contrast, in the case of positive differential conductivity, the oscillation frequency becomes very high, while the relaxation time remains the same, 1/Γ.
机译:发现了一种对两势垒纳米结构中瞬态过程问题的解析解。对于由瞬时施加的弱电场产生的瞬态电流,可以获得明确的表达式。电流在时间?/Γ(Γ是共振能级的宽度)时松弛到稳态,以ξ=ε–ε_R的频率振荡,其中ε是来自发射极的电子能量,而ε_R是共振能级。在准经典近似中可以找到与电子相互作用的瞬态电流。结果表明,电子之间的相互作用会极大地改变瞬态电流,特别是在存在电流-电压特性(CVC)滞后的情况下。在负差分电导率区域内接近极端CVC值时,振荡频率趋于零并变为虚数,从而补偿了衰减。因此,瞬态电流在没有振荡的情况下非常长时间地松弛。相反,在正电导率差的情况下,振荡频率变得很高,而弛豫时间保持不变,为1 /Γ。

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