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首页> 外文期刊>Journal of Experimental and Theoretical Physics >Direct and spatially indirect excitons in GaAs/AlGaAs superlattices in strong magnetic fields
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Direct and spatially indirect excitons in GaAs/AlGaAs superlattices in strong magnetic fields

机译：强磁场中GaAs / AlGaAs超晶格中的直接和空间间接激子

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摘要

Luminescence and luminescence excitation spectra are used to study the energy spectrum and binding energies of direct and spatially indirect excitons in GaAs/AlGaAs superlattices, with different widths of the electron and hole minibands, located in a high magnetic field perpendicular to the heterolayers. It is found that the ground state of the indirect excitons formed by electrons and holes and spatially separated between neighboring quantum wells lies between the 1s ground state of the direct excitons and the continuum threshold for dissociated exciton states in the minibands. Indirect excitons in superlattices have a significant oscillator strength when the binding energy of the exciton exceeds the order of the width of the resulting miniband. The behavior of the binding energy of direct and indirect heavy hole excitons during changes in the tunneling coupling between the quantum wells is established. It is shown that a strong magnetic field, which intensifies the Coulomb interaction between the electron and hole in an exciton, weakens the bond in a system of symmetrically bound quantum wells. The spatially indirect excitons studied here are analogous to first order Wannier–Stark localized excitons in superlattices with inclined bands (when an electrical bias is applied), but in the present case the localization is of purely Coulomb origin.
机译：发光和发光激发光谱用于研究在垂直于异质层的高磁场中具有不同宽度的电子和空穴微带的GaAs / AlGaAs超晶格中的直接和空间间接激子的能谱和结合能。发现由电子和空穴形成并在空间上隔开的相邻量子阱之间的间接激子的基态位于直接激子的1s基态和微带中解离激子态的连续阈值之间。当激子的结合能超过所得微带宽度的数量级时，超晶格中的间接激子具有显着的振荡强度。建立了在量子阱之间的隧道耦合变化期间直接和间接重空穴激子的结合能的行为。结果表明，强磁场增强了激子中电子与空穴之间的库仑相互作用，削弱了对称结合量子阱系统中的键。这里研究的空间间接激子类似于带倾斜带的超晶格中的一阶Wannier–Stark局部激子（当施加电偏压时），但是在当前情况下，该局部激子纯粹是库仑起源的。

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