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首页> 外文期刊>Journal of Experimental and Theoretical Physics >Orbital and spin effects in the low-temperature behavior of the magnetoresistance of doped CdTe crystals
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Orbital and spin effects in the low-temperature behavior of the magnetoresistance of doped CdTe crystals

机译：掺杂CdTe晶体磁阻的低温行为中的轨道和自旋效应

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摘要

An observation of the suppression of negative magnetoresistance in samples of doped CdTe that are far from the metal–insulator transition as the temperature is lowered in the temperature range 3–0.4 K was previously reported [N. V. Agrinskaya, V. I. Kozub, and D. V. Shamshur, JETP 80, 1142 (1995)]. The results of an investigation of samples that are closer to the transition in the low-temperature region below 36 mK are presented. It is discovered that the samples investigated (which do not exhibit the suppression of negative magnetoresistance at comparatively high temperatures) display this effect at low temperatures and that, as previously, the suppression of the negative magnetoresistance correlates with the transition to conduction via Coulomb-gap states. A plateau-like magnetoresistance feature is displayed at low temperatures for the sample that is closest to the metal–insulator transition. The results obtained are analyzed within existing theoretical models that take into account the role of both the orbital and spin degrees of freedom. In particular, the low-temperature feature indicated is interpreted as a manifestation of positive magnetoresistance caused by spin effects. Nevertheless, it is shown within a detailed analysis supplemented by numerical calculations that the observed suppression of the negative magnetoresistance cannot be attributed only to the appearance of spin positive magnetoresistance. Moreover, the possibility of observing spin positive magnetoresistance is determined to a certain extent specifically by the suppression of the negative magnetoresistance competing with it.
机译：以前有报道称，随着温度在3–0.4 K的温度范围内降低，掺杂的CdTe样品中远离金属-绝缘体转变的负磁阻得到了抑制[N。 V. Agrinskaya，V。I. Kozub和D. V. Shamshur，JETP 80，1142（1995）]。给出了在低于36 mK的低温区域中更接近转变的样品的调查结果。发现所研究的样品（在较高温度下不表现出对负磁阻的抑制作用）在低温下显示出这种效果，并且与以前一样，对负磁阻的抑制作用与通过库仑隙转变为导电有关状态。在低温下，最接近金属-绝缘体转变的样品会显示出高原样的磁阻特征。在现有的理论模型中对获得的结果进行了分析，其中考虑了轨道和自旋自由度的作用。特别地，所指示的低温特征被解释为由自旋效应引起的正磁阻的表现。然而，在由数值计算补充的详细分析中显示，观察到的对负磁阻的抑制不能仅归因于自旋正磁阻的出现。此外，观察到自旋正磁电阻的可能性在某种程度上是通过抑制与之竞争的负磁电阻来确定的。

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