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首页> 外文期刊>Journal of Experimental and Theoretical Physics >Magnetoresistivity in a tilted magnetic field in p-Si/SiGe/Si heterostructures with an anisotropic g-factor. Part II
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Magnetoresistivity in a tilted magnetic field in p-Si/SiGe/Si heterostructures with an anisotropic g-factor. Part II

机译：p-Si / SiGe / Si异质结构中具有各向异性g因子的倾斜磁场中的磁电阻率。第二部分

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摘要

The magnetoresistance components ρ_(xx) and ρ _(xy) are measured in two p-Si/SiGe/Si quantum wells that have an anisotropic g-factor in a tilted magnetic field as a function of the temperature, field, and tilt angle. Activation energy measurements demonstrate the existence of a ferromagnetic-paramagnetic (F-P) transition for the sample with the hole density p = 2 × 10~(11) cm~(-2). This transition is due to the crossing of the 0 ↑ and 1↓ Landau levels. However, in another sample with p = 7.2 × 10~(10) cm~(-2), the 0 ↑ and 1↓ Landau levels coincide for angles θ = 0-70°. Only for θ > 70° do the levels start to diverge which, in turn, results in the energy gap opening.
机译：磁阻分量ρ_（xx）和ρ_（xy）在两个p-Si / SiGe / Si量子阱中测量，该量子阱在倾斜磁场中具有各向异性g因子，是温度，场和倾斜角的函数。活化能测量结果表明，空穴密度为p = 2×10〜（11）cm〜（-2）的样品存在铁磁-顺磁（F-P）跃迁。此过渡归因于0↑和1↓Landau等级的交叉。但是，在另一个p = 7.2×10〜（10）cm〜（-2）的样本中，角度θ= 0-70°时0↑和1↓朗道能级重合。仅当θ> 70°时，能级才开始发散，从而导致能隙打开。

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