Buckling of reconstruction elements of the edges of triple steps on vicinal Si(111) surfaces

Zhachuk R. A.; Coutinho J.; Rayson M. J.; Briddon P. R.

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Buckling of reconstruction elements of the edges of triple steps on vicinal Si(111) surfaces

机译：Si（111）相邻表面上三重台阶边缘的重建元素的屈曲

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The structure of steps with a height of three (111) interplanar distances on vicinal Si(111) surfaces has been analyzed through density functional theory calculations. It has been shown that several stable atomic configurations are possible depending on the buckling of the reconstruction elements of edges of the steps on the surface. It has been found that the direction of the buckling of reconstruction elements in the ground state of the surface is determined by the Coulomb interaction with their nearest atomic environment.

机译：通过密度泛函理论计算，分析了相邻Si（111）表面上具有三（111）个晶面间距的台阶结构。已经表明，取决于表面上台阶的边缘的重构元件的屈曲，几种稳定的原子构型是可能的。已经发现，在表面的基态中，重构元件的屈曲方向由与它们最接近的原子环境的库仑相互作用确定。

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《Journal of Experimental and Theoretical Physics》 |2015年第4期|共6页
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Zhachuk R. A.; Coutinho J.; Rayson M. J.; Briddon P. R.;
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1. Buckling of reconstruction elements of the edges of triple steps on vicinal Si(111) surfaces [J] . Zhachuk R. A., Coutinho J., Rayson M. J., Journal of Experimental and Theoretical Physics . 2015,第4期

机译：Si（111）相邻表面上三重台阶边缘的重建元素的屈曲
2. Orientation and structure of triple step staircase on vicinal Si(111) surfaces [J] . Teys SA, Romanyuk KN, Zhachuk RA, Surface Science . 2006,第21期

机译：Si（111）邻面上三步阶梯的取向和结构
3. Step-edge guided growth of nanowires on three-fold symmetric vicinal Si(111) surfaces [J] . DEBOLINA DAS, TIRTHANKAR CHOUDHURY Bulletin of materials science . 2020,第6期

机译：纳米线在三折对称vicinal Si（111）表面上的纳米线引导生长
4. Growth of A-Few-Atom Wide Nanowires with Different Surface Reconstructions Via Desorption of Au on Vicinal Si (111) Surfaces [C] . Debolina Das, J. C. Mahato, R. Batabyal, RAM 2013 . 2013

机译：通过在Vicinal Si（111）表面上的Au解吸通过Au的不同表面重建的少量纳米线的生长
5. Steps on vicinal surfaces: Density-functional theory calculations and transcending minimal statistical-mechanical models. [D] . Sathiyanarayanan, Rajesh. 2009

机译：在邻近表面上的步骤：密度泛函理论计算和超越最小的统计力学模型。
6. X-ray photoemission analysis of clean and carbon monoxide-chemisorbed platinum(111) stepped surfaces using a curved crystal [O] . Andrew L. Walter, Frederik Schiller, Martina Corso, -1

机译：使用曲面晶体对清洁的和一氧化碳化学吸附的Platinum（111）台阶表面进行X射线光发射分析
7. Atomically straight steps on vicinal Si (111) surfaces prepared by step-parallel current in the kink-up direction [O] . Yoshida, S., Sekiguchi, T., Itoh, K. M. 2005

机译：在邻近的si（111）表面上的原子直接台阶在扭结方向上的阶梯并联电流
8. RHEED studies of vicinal Si(111) surfaces and Ag films grown on Si(111) [R] . Stanley, M. K. 1998

机译：在si（111）上生长的邻近si（111）表面和ag薄膜的RHEED研究

Buckling of reconstruction elements of the edges of triple steps on vicinal Si(111) surfaces

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