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首页> 外文期刊>Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena >Laser Assisted Formation of SiC Nano-tips for Field Emission Application
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Laser Assisted Formation of SiC Nano-tips for Field Emission Application

机译：用于场发射应用的激光辅助形成的SiC纳米尖端

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摘要

Nano-tip formation was performed on the surface of 6H-SiC(N) (N_D-N_A ～ 1-3 10~(18) cm~(-3)) by an N_2 laser (1 = 0.337 urn, t_p = 7 ns) focused beam in air at room temperature. The nano-tips are of subrnicron size. The average intensity of this threshold of laser irradiation (LI) () is the same for two kinds of operation mode and estimated as 5 GW cm~(-2). Results of the photoluminescence and studies of AFM in the friction mode suggest an increase of the nitrogen concentration near the surface. The emission current was measured in the vacuum diode structure. In the measurement conditions electron field emission from single crystal SiC were not observed. After laser irradiation of the surface and the creation of nano-tips the field emission appeared (threshold voltage - 1000 V, emission current ～7 10~(-7) A, effective work function φ_(ef) ≈ 4.65 eV). The phenomenon observed can become a basis for the development of an alternative cold technology of forming nano-size structures on a surface of SiC. Laser assisted formation of SiC nano-tips is a promising method for the creation of electron field emission devices.
机译：通过N_2激光（1 = 0.337 urn，t_p = 7 ns）在6H-SiC（N）（N_D-N_A〜1-3 10〜（18）cm〜（-3））的表面上形成纳米尖端。 ）在室温下将光束聚焦在空气中。纳米尖端的大小为亚铁。对于两种操作模式，该激光照射阈值（LI）（）的平均强度相同，估计为5 GW cm〜（-2）。在摩擦模式下的光致发光结果和AFM的研究表明，表面附近的氮浓度增加了。在真空二极管结构中测量发射电流。在测量条件下，未观察到来自单晶SiC的电子场发射。在激光照射表面并形成纳米尖端后，出现了场发射（阈值电压-1000 V，发射电流〜7 10〜（-7）A，有效功函数φ_（ef）≈4.65 eV）。观察到的现象可以成为开发替代冷技术的基础，该技术可以在SiC表面形成纳米尺寸的结构。激光辅助形成SiC纳米尖端是创建电子场发射器件的有前途的方法。

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