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Characterization of charging effect of citrate-capped Au nanoparticle pentacene 1 device

机译:柠檬酸盐包覆的Au纳米并五苯1器件的充电效应表征

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Capacitance-voltage hysteresis for a non-volatile memory was realized in a metal-pentacene-insulator-silicon (MPIS) device using gold (Au) nanoparticles (NPs) intervened between pentacene and SiO2 insulator. A memory window higher than 2.0 V was obtained under (±) 5 V programming sweeping range. The SiO2 as thick as 30 nm was adopted as the dielectric layer, and 3-aminopropyl-triethoxysilane (APTES) was used for self-assembling of Au NPs monolayer. In addition, citrate-functionalized Au NPs was dip-coated and used as charge storage elements. Formation of a monolayer of the Au NPs was confirmed by HR-SEM and AFM. Capacitance-voltage hysteresis in this study was resulted from the charge storage in the layer of Au NPs.
机译:在金属并五苯绝缘体-硅(MPIS)器件中,通过在并五苯和SiO2绝缘体之间插入金(Au)纳米粒子(NP),实现了用于非易失性存储器的电容电压滞后。在(±)5 V编程扫描范围内获得了高于2.0 V的存储窗口。将厚度为30 nm的SiO2用作介电层,并使用3-氨丙基三乙氧基硅烷(APTES)自组装Au NPs单层。另外,将柠檬酸盐官能化的Au NP浸涂并用作电荷存储元件。通过HR-SEM和AFM证实了Au NP的单层的形成。这项研究中的电容电压滞后现象是由Au NPs层中的电荷存储引起的。

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