Ion/Molecule reactions in SiH4/H2S and GeH4/H2S mixtures

Antoniotti P; Operti L; Rabezzana R; Turco F; Vaglio GA; Grandinetti F

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Ion/Molecule reactions in SiH4/H2S and GeH4/H2S mixtures

机译：SiH4 / H2S和GeH4 / H2S混合物中的离子/分子反应

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The gas phase ion chemistry of silane/hydrogen sulfide and germane/hydrogen sulfide mixtures was studied by ion trap mass spectrometry (ITMS), in both positive and negative ionization mode. In positive ionization, formation of X/S (X = Si, Ge) mixed ions mainly takes place via reactions of silane or germane ions with H2S, through condensation followed by dehydrogenation. This is particularly evident in the system with silane. On the other side, reactions of HnS2+ ions with XH4 (X = Si, Ge) invariably lead to formation of a single X-S bond. In negative ionization, a more limited number of mixed ion species is detected, but their overall abundance reaches appreciable values, especially in the SiH4/H2S system. Present results clearly indicate that ion processes play an important role in formation and growth of clusters eventually leading to deposition of amorphous solids in chemical vapor deposition (CVD) processes.

机译：通过离子阱质谱（ITMS），以正电离和负电离两种模式研究了硅烷/硫化氢和锗烷/硫化氢混合物的气相离子化学。在正电离中，X / S（X = Si，Ge）混合离子的形成主要是通过硅烷或锗离子与H2S的反应，缩合然后脱氢而发生的。这在使用硅烷的体系中尤其明显。另一方面，HnS2 +离子与XH4（X = Si，Ge）的反应总是导致形成单个X-S键。在负离子化中，检测到混合离子种类的数量有限，但它们的总体丰度达到了可观的值，尤其是在SiH4 / H2S系统中。目前的结果清楚地表明，离子过程在簇的形成和生长中起着重要作用，最终导致化学气相沉积（CVD）过程中非晶态固体的沉积。

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《Journal of mass spectrometry: JMS》 |2009年第5期|共10页
作者
Antoniotti P; Operti L; Rabezzana R; Turco F; Vaglio GA; Grandinetti F;
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正文语种 eng
中图分类分析化学;
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gas phase ion chemistry; germane; ion trap mass spectrometry; semiconductors; silane;

机译：气相离子化学德国锗离子阱质谱半导体硅烷;

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1. Ion/Molecule reactions in SiH4/H2S and GeH4/H2S mixtures [J] . Antoniotti P, Operti L, Rabezzana R, Journal of mass spectrometry: JMS . 2009,第5期

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2. Theoretical Study on the Substitution Reactions of Silylenoid H2SiLiF with CH4,NH3,H2O,HF,SiH4,PH3,H2S,and HCl [J] . Ju Xie, Dacheng Feng, Shengyu Feng The journal of physical chemistry, A. Molecules, spectroscopy, kinetics, environment, & general theory . 2007,第34期

机译：硅基H2SiLiF与CH4，NH3，H2O，HF，SiH4，PH3，H2S和HCl取代反应的理论研究
3. Ab initio study of the insertion reactions of Sc+(D-1) with HF, HCl, H2O, H2S, NH3, PH3, CH4, and SiH4 [J] . Ye S, Wang CJ International Journal of Quantum Chemistry . 2005,第6期

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Ion/Molecule reactions in SiH4/H2S and GeH4/H2S mixtures

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